Abstract
New chemical vapor deposition (CVD) processes controlled by light irradiation are studied and applied to III-V semiconductor device technology. The interactions between the incident photons of and the gas-substrate system are either photolytic (UV lamps) or pyrolytic (IR lamps). In the first case the process is cold and in the second one it produces fast thermal ramping. The technique is thus compatible in both cases with the fragile semiconductor substrate and it allows in-situ processing. We report here a set of results involving surface and interface studies in order to prepare the deposition of thin film materials and thin dielectric film deposition using 'flash' CVD or UVCVD. The aim of this work is to propose alternative technologies for III-V semiconductors.
| Original language | English |
|---|---|
| Pages (from-to) | 216-228 |
| Number of pages | 13 |
| Journal | Proceedings of SPIE - The International Society for Optical Engineering |
| Volume | 1393 |
| Publication status | Published - 1 Jan 1991 |
| Externally published | Yes |
| Event | Rapid Thermal and Related Processing Techniques - Santa Clara, CA, USA Duration: 2 Oct 1990 → 3 Oct 1990 |