TY - GEN
T1 - N-type bottom-gate macrocrystalline silicon thin film transistors fabricated at 150°C on flexible plastic substrates
AU - Oudwan, Maher
AU - Jin, Jong Woo
AU - Daineka, Dmitri
AU - Bonnassieux, Yvan
AU - Roca I Cabarrocas, Pere
PY - 2011/12/1
Y1 - 2011/12/1
N2 - A bottom gate microcrystalline silicon thin film transistor (TFT) process with a 150°C maximum temperature using plasma enhanced chemical vapour deposition has been developed on highly transparent polyethylene naphthalate (PEN) and glass. Electrical characteristics of μc-Si:H TFT on plastic substrate present a high potential for AMOLED application.
AB - A bottom gate microcrystalline silicon thin film transistor (TFT) process with a 150°C maximum temperature using plasma enhanced chemical vapour deposition has been developed on highly transparent polyethylene naphthalate (PEN) and glass. Electrical characteristics of μc-Si:H TFT on plastic substrate present a high potential for AMOLED application.
UR - https://www.scopus.com/pages/publications/84860871573
M3 - Conference contribution
AN - SCOPUS:84860871573
SN - 9781618396006
T3 - SID Conference Record of the International Display Research Conference
SP - 270
EP - 272
BT - 31st International Display Research Conference 2011, EuroDisplay 2011
T2 - 31st International Display Research Conference 2011, EuroDisplay 2011
Y2 - 19 September 2011 through 22 September 2011
ER -