Nanoparticle formation in low-pressure silane plasmas: Bridging the gap between a-Si:H and μc-Si films

Detailed analysis of the structure of silicon films prepared under particular rf glow discharge conditions conclusively show that nanometer-size (∼ 2 nm) ordered regions can be present in the matrix of this disordered semiconductor. The obtaining of such a type of 'nanostructured' silicon films, referred to as polymorphous silicon in the following, under a wide range of plasma conditions, is attributed to the contribution of silicon 'nanoparticles' to the growth of the films.