Nanoporous alumina templates for nanowire electron devices

Nanoporous alumina templates are demonstrated as device structures for nanowire field-effect transistors (FETs). A ZnO nanowire surrounding gate FET demonstrates the utility of this nanostructured template. This bottom-up approach is unique in that the fabrication can be almost entirely done using room temperature electrochemistry. The technique is extended to lateral-anodized nanoporous aluminum thin-films, compatible with standard silicon technology and illustrated by the possible fabrication of an active matrix backplane with only four lithographic masks.