Nanoporous alumina wire templates for surrounding-gate nanowire transistors

Aluminium wires are electrochemically sculptured into bi-directional templates for the templated growth and contacting of nanowires as three terminal devices. The use of this nanostructured template is demonstrated by a ZnO nanowire surrounding-gate field-effect transistor. This bottom-up approach to a 3D nanowire transistor is unique in that it can be almost entirely fabricated in a beaker using aqueous, room temperature electrochemistry. The fabrication procedures and preliminary device characteristics of this new approach to nanowire transistors are shown.