Nanoscale Investigation of Carrier Lifetime on the Cross Section of Epitaxial Silicon Solar Cells Using Kelvin Probe Force Microscopy

Paul Narchi; Romain Cariou; Martin Foldyna; Patricia Prodhomme; Pere RocaCabarrocas

doi:10.1109/JPHOTOV.2016.2598258

Nanoscale Investigation of Carrier Lifetime on the Cross Section of Epitaxial Silicon Solar Cells Using Kelvin Probe Force Microscopy

Paul Narchi
, Romain Cariou
, Martin Foldyna
, Patricia Prodhomme
, Pere RocaCabarrocas

Total
Université Paris-Saclay
Institut Photovoltaïque d'Ile-de-France

Research output: Contribution to journal › Article › peer-review

Abstract

Nanoscale investigation of material properties is of high interest for improving photovoltaic devices. In this paper, we present a technique to assess minority carrier lifetime at nanoscale. To do so, we use Kelvin probe force microscopy on the cross section of an epitaxial silicon solar cell under modulated frequency electrical bias. Our measurements present a good spatial and temporal agreement with standard material characterization techniques.

Original language	English
Article number	7552496
Pages (from-to)	1576-1580
Number of pages	5
Journal	IEEE Journal of Photovoltaics
Volume	6
Issue number	6
DOIs	https://doi.org/10.1109/JPHOTOV.2016.2598258
Publication status	Published - 1 Nov 2016

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

Carrier lifetime
Kelvin probe force microscopy (KPFM)
epitaxial silicon
modulated frequency
silicon
thin-film solar cells

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10.1109/JPHOTOV.2016.2598258

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title = "Nanoscale Investigation of Carrier Lifetime on the Cross Section of Epitaxial Silicon Solar Cells Using Kelvin Probe Force Microscopy",

abstract = "Nanoscale investigation of material properties is of high interest for improving photovoltaic devices. In this paper, we present a technique to assess minority carrier lifetime at nanoscale. To do so, we use Kelvin probe force microscopy on the cross section of an epitaxial silicon solar cell under modulated frequency electrical bias. Our measurements present a good spatial and temporal agreement with standard material characterization techniques.",

keywords = "Carrier lifetime, Kelvin probe force microscopy (KPFM), epitaxial silicon, modulated frequency, silicon, thin-film solar cells",

author = "Paul Narchi and Romain Cariou and Martin Foldyna and Patricia Prodhomme and Pere RocaCabarrocas",

note = "Publisher Copyright: {\textcopyright} 2011-2012 IEEE.",

year = "2016",

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doi = "10.1109/JPHOTOV.2016.2598258",

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AU - Narchi, Paul

AU - Cariou, Romain

AU - Foldyna, Martin

AU - Prodhomme, Patricia

AU - RocaCabarrocas, Pere

PY - 2016/11/1

Y1 - 2016/11/1

N2 - Nanoscale investigation of material properties is of high interest for improving photovoltaic devices. In this paper, we present a technique to assess minority carrier lifetime at nanoscale. To do so, we use Kelvin probe force microscopy on the cross section of an epitaxial silicon solar cell under modulated frequency electrical bias. Our measurements present a good spatial and temporal agreement with standard material characterization techniques.

AB - Nanoscale investigation of material properties is of high interest for improving photovoltaic devices. In this paper, we present a technique to assess minority carrier lifetime at nanoscale. To do so, we use Kelvin probe force microscopy on the cross section of an epitaxial silicon solar cell under modulated frequency electrical bias. Our measurements present a good spatial and temporal agreement with standard material characterization techniques.

KW - Carrier lifetime

KW - Kelvin probe force microscopy (KPFM)

KW - epitaxial silicon

KW - modulated frequency

KW - silicon

KW - thin-film solar cells

U2 - 10.1109/JPHOTOV.2016.2598258

DO - 10.1109/JPHOTOV.2016.2598258

M3 - Article

AN - SCOPUS:84983598207

SN - 2156-3381

VL - 6

SP - 1576

EP - 1580

JO - IEEE Journal of Photovoltaics

JF - IEEE Journal of Photovoltaics

IS - 6

M1 - 7552496

ER -

Nanoscale Investigation of Carrier Lifetime on the Cross Section of Epitaxial Silicon Solar Cells Using Kelvin Probe Force Microscopy

Abstract

UN SDGs

Keywords

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