Nanoscale wet chemical engineering of III-V quantum dots for emerging solar applications

M. Bouttemy; D. Aureau; M. Frégnaux; Y. Shoji; Z. Jehl; D. Suchet; J. F. Guillemoles; A. Etcheberry; Y. Okada

doi:10.1149/08904.0037ecst

Nanoscale wet chemical engineering of III-V quantum dots for emerging solar applications

M. Bouttemy
, D. Aureau
, M. Frégnaux
, Y. Shoji
, Z. Jehl
, D. Suchet
, J. F. Guillemoles
, A. Etcheberry
, Y. Okada

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Multi-junction solar cells architectures have gained interest among the photovoltaic community, as they are very promising architectures for high efficiency devices. Among the different configuration envisaged, the use of III-V materials has yet proved to be relevant. More especially, recent studies have shown that the implementation of quantum dots on the surface of a III-V layer leads to the generation of an intermediate band with the benefit to reach efficiencies around 48%. Two issues are considered: the elimination of the wetting layer detrimental for optoelectronic properties and then the control of the quantum dots shape and chemistry to adjust the band-gap. Wet chemistry is a conventional strategy used for III-V material surface engineering. In the present case, specific formulations and protocols are developed to fulfill the nanometric dimension considerations and take account for specificities of this 1 or 0-Dimension like structuration, on the base of surface analyses expertise.

Original language	English
Title of host publication	Processes at the Semiconductor Solution Interface 8
Editors	C. O'Dwyer, D. N. Buckley, A. Etcheberry, A. C. Hillier, R. Lynch, P. M. Vereecken, H. Wang, V. Chakrapani
Publisher	Electrochemical Society Inc.
Pages	37-46
Number of pages	10
Edition	4
ISBN (Electronic)	9781607688662, 9781607688686, 9781607688693, 9781607688693, 9781607688709, 9781607688716, 9781607688723
DOIs	https://doi.org/10.1149/08904.0037ecst
Publication status	Published - 1 Jan 2019
Event	Symposium on Processes at the Semiconductor Solution Interface 8 - 235th ECS Meeting - Dallas, United States Duration: 26 May 2019 → 30 May 2019

Publication series

Name	ECS Transactions
Number	4
Volume	89
ISSN (Print)	1938-6737
ISSN (Electronic)	1938-5862

Conference

Conference	Symposium on Processes at the Semiconductor Solution Interface 8 - 235th ECS Meeting
Country/Territory	United States
City	Dallas
Period	26/05/19 → 30/05/19

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1149/08904.0037ecst

Cite this

Bouttemy, M., Aureau, D., Frégnaux, M., Shoji, Y., Jehl, Z., Suchet, D., Guillemoles, J. F., Etcheberry, A., & Okada, Y. (2019). Nanoscale wet chemical engineering of III-V quantum dots for emerging solar applications. In C. O'Dwyer, D. N. Buckley, A. Etcheberry, A. C. Hillier, R. Lynch, P. M. Vereecken, H. Wang, & V. Chakrapani (Eds.), Processes at the Semiconductor Solution Interface 8 (4 ed., pp. 37-46). (ECS Transactions; Vol. 89, No. 4). Electrochemical Society Inc.. https://doi.org/10.1149/08904.0037ecst

Bouttemy, M. ; Aureau, D. ; Frégnaux, M. et al. / Nanoscale wet chemical engineering of III-V quantum dots for emerging solar applications. Processes at the Semiconductor Solution Interface 8. editor / C. O'Dwyer ; D. N. Buckley ; A. Etcheberry ; A. C. Hillier ; R. Lynch ; P. M. Vereecken ; H. Wang ; V. Chakrapani. 4. ed. Electrochemical Society Inc., 2019. pp. 37-46 (ECS Transactions; 4).

@inproceedings{dd81db276e634fb0a153d9221b867058,

title = "Nanoscale wet chemical engineering of III-V quantum dots for emerging solar applications",

abstract = "Multi-junction solar cells architectures have gained interest among the photovoltaic community, as they are very promising architectures for high efficiency devices. Among the different configuration envisaged, the use of III-V materials has yet proved to be relevant. More especially, recent studies have shown that the implementation of quantum dots on the surface of a III-V layer leads to the generation of an intermediate band with the benefit to reach efficiencies around 48\%. Two issues are considered: the elimination of the wetting layer detrimental for optoelectronic properties and then the control of the quantum dots shape and chemistry to adjust the band-gap. Wet chemistry is a conventional strategy used for III-V material surface engineering. In the present case, specific formulations and protocols are developed to fulfill the nanometric dimension considerations and take account for specificities of this 1 or 0-Dimension like structuration, on the base of surface analyses expertise.",

author = "M. Bouttemy and D. Aureau and M. Fr{\'e}gnaux and Y. Shoji and Z. Jehl and D. Suchet and Guillemoles, \{J. F.\} and A. Etcheberry and Y. Okada",

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Bouttemy, M, Aureau, D, Frégnaux, M, Shoji, Y, Jehl, Z, Suchet, D , Guillemoles, JF, Etcheberry, A & Okada, Y 2019, Nanoscale wet chemical engineering of III-V quantum dots for emerging solar applications. in C O'Dwyer, DN Buckley, A Etcheberry, AC Hillier, R Lynch, PM Vereecken, H Wang & V Chakrapani (eds), Processes at the Semiconductor Solution Interface 8. 4 edn, ECS Transactions, no. 4, vol. 89, Electrochemical Society Inc., pp. 37-46, Symposium on Processes at the Semiconductor Solution Interface 8 - 235th ECS Meeting, Dallas, United States, 26/05/19. https://doi.org/10.1149/08904.0037ecst

Nanoscale wet chemical engineering of III-V quantum dots for emerging solar applications. / Bouttemy, M.; Aureau, D.; Frégnaux, M. et al.
Processes at the Semiconductor Solution Interface 8. ed. / C. O'Dwyer; D. N. Buckley; A. Etcheberry; A. C. Hillier; R. Lynch; P. M. Vereecken; H. Wang; V. Chakrapani. 4. ed. Electrochemical Society Inc., 2019. p. 37-46 (ECS Transactions; Vol. 89, No. 4).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Nanoscale wet chemical engineering of III-V quantum dots for emerging solar applications

AU - Bouttemy, M.

AU - Aureau, D.

AU - Frégnaux, M.

AU - Shoji, Y.

AU - Jehl, Z.

AU - Suchet, D.

AU - Guillemoles, J. F.

AU - Etcheberry, A.

AU - Okada, Y.

PY - 2019/1/1

Y1 - 2019/1/1

N2 - Multi-junction solar cells architectures have gained interest among the photovoltaic community, as they are very promising architectures for high efficiency devices. Among the different configuration envisaged, the use of III-V materials has yet proved to be relevant. More especially, recent studies have shown that the implementation of quantum dots on the surface of a III-V layer leads to the generation of an intermediate band with the benefit to reach efficiencies around 48%. Two issues are considered: the elimination of the wetting layer detrimental for optoelectronic properties and then the control of the quantum dots shape and chemistry to adjust the band-gap. Wet chemistry is a conventional strategy used for III-V material surface engineering. In the present case, specific formulations and protocols are developed to fulfill the nanometric dimension considerations and take account for specificities of this 1 or 0-Dimension like structuration, on the base of surface analyses expertise.

AB - Multi-junction solar cells architectures have gained interest among the photovoltaic community, as they are very promising architectures for high efficiency devices. Among the different configuration envisaged, the use of III-V materials has yet proved to be relevant. More especially, recent studies have shown that the implementation of quantum dots on the surface of a III-V layer leads to the generation of an intermediate band with the benefit to reach efficiencies around 48%. Two issues are considered: the elimination of the wetting layer detrimental for optoelectronic properties and then the control of the quantum dots shape and chemistry to adjust the band-gap. Wet chemistry is a conventional strategy used for III-V material surface engineering. In the present case, specific formulations and protocols are developed to fulfill the nanometric dimension considerations and take account for specificities of this 1 or 0-Dimension like structuration, on the base of surface analyses expertise.

U2 - 10.1149/08904.0037ecst

DO - 10.1149/08904.0037ecst

M3 - Conference contribution

AN - SCOPUS:85070089866

T3 - ECS Transactions

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EP - 46

BT - Processes at the Semiconductor Solution Interface 8

A2 - O'Dwyer, C.

A2 - Buckley, D. N.

A2 - Etcheberry, A.

A2 - Hillier, A. C.

A2 - Lynch, R.

A2 - Vereecken, P. M.

A2 - Wang, H.

A2 - Chakrapani, V.

PB - Electrochemical Society Inc.

T2 - Symposium on Processes at the Semiconductor Solution Interface 8 - 235th ECS Meeting

Y2 - 26 May 2019 through 30 May 2019

ER -

Bouttemy M, Aureau D, Frégnaux M, Shoji Y, Jehl Z, Suchet D et al. Nanoscale wet chemical engineering of III-V quantum dots for emerging solar applications. In O'Dwyer C, Buckley DN, Etcheberry A, Hillier AC, Lynch R, Vereecken PM, Wang H, Chakrapani V, editors, Processes at the Semiconductor Solution Interface 8. 4 ed. Electrochemical Society Inc. 2019. p. 37-46. (ECS Transactions; 4). doi: 10.1149/08904.0037ecst

Nanoscale wet chemical engineering of III-V quantum dots for emerging solar applications

Abstract

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