Nanotwin-induced ductile mechanism in thermoelectric semiconductor PbTe

  • Min Huang
  • , Pengcheng Zhai
  • , Guodong Li
  • , Qi An
  • , Sergey I. Morozov
  • , Wenjuan Li
  • , Qingjie Zhang
  • , William A. Goddard

Research output: Contribution to journalArticlepeer-review

Abstract

Coherent twin boundaries (CTBs) with the lowest interfacial energy provide a strong phonon-CTB scattering source to suppress the lattice thermal conductivity needed for thermoelectric properties, but the impact on mechanical properties of PbTe remains unexplored. We construct nanotwinned structures with Pb- or Te-terminated CTB (Pb- or Te-CTB) along (111) plane and employ molecular dynamics simulations to examine structural evolution. We find that Pb-CTBs weaken ionic Pb-Te bonds to generate an easy dislocation source at CTBs. Due to nucleation and motion of partial dislocations on each Pb-CTB plane driven by shear load, Pb-CTBs gradually migrate to Te-CTBs, which is accompanied by breaking and re-forming of Pb-Te bonds. This “catching bond” maintains structural integrity while dramatically enhancing deformability of nanotwinned PbTe. Dislocations move from Te-CTBs toward twin lamellae, resulting in the structural slippage and fracture. These findings provide a theoretical strategy to improve the ductility of PbTe-based semiconductors through TB engineering.

Original languageEnglish
Pages (from-to)1839-1852
Number of pages14
JournalMatter
Volume5
Issue number6
DOIs
Publication statusPublished - 1 Jun 2022
Externally publishedYes

Keywords

  • CTB migration
  • MAP3: Understanding
  • catching bond
  • ductile mechanism
  • nanotwin
  • thermoelectric semiconductor

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