Native vacancies in nitrogen-doped and undoped ZnSe layers studied by positron annihilation

P. Desgardin; J. Oila; K. Saarinen; P. Hautojärvi; E. Tournié; J. P. Faurie; C. Corbel

doi:10.1103/PhysRevB.62.15711

Native vacancies in nitrogen-doped and undoped ZnSe layers studied by positron annihilation

P. Desgardin
, J. Oila
, K. Saarinen
, P. Hautojärvi
, E. Tournié
, J. P. Faurie
, C. Corbel

Research output: Contribution to journal › Article › peer-review

Abstract

We have used a low-energy positron beam to investigate the defects in N-doped and undoped ZnSe layers grown on GaAs:Si or ZnSe substrates. In N-doped ZnSe we observe positron trapping at vacancies, identified as V_SeN_Se complexes, and at negative ions. Based on positron data, we give estimates for the concentrations of vacancies and negative ions. The results suggest that in addition to forming isolated N_Se acceptors or V_SeN_Se pairs, incorporated nitrogen also forms donor-type defects leading to compensation of holes. In undoped ZnSe layers, the results show presence of Zn vacancies in concentrations 10¹⁶-10¹⁷ cm^-3. The Zn vacancy concentration correlates with the dislocation density at the ZnSe/GaAs interface.

Original language	English
Pages (from-to)	15711-15717
Number of pages	7
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	62
Issue number	23
DOIs	https://doi.org/10.1103/PhysRevB.62.15711
Publication status	Published - 15 Dec 2000

Access to Document

10.1103/PhysRevB.62.15711

Cite this

@article{6725a464e2784db3bb7453a3f0190566,

title = "Native vacancies in nitrogen-doped and undoped ZnSe layers studied by positron annihilation",

abstract = "We have used a low-energy positron beam to investigate the defects in N-doped and undoped ZnSe layers grown on GaAs:Si or ZnSe substrates. In N-doped ZnSe we observe positron trapping at vacancies, identified as VSeNSe complexes, and at negative ions. Based on positron data, we give estimates for the concentrations of vacancies and negative ions. The results suggest that in addition to forming isolated NSe acceptors or VSeNSe pairs, incorporated nitrogen also forms donor-type defects leading to compensation of holes. In undoped ZnSe layers, the results show presence of Zn vacancies in concentrations 1016-1017 cm-3. The Zn vacancy concentration correlates with the dislocation density at the ZnSe/GaAs interface.",

author = "P. Desgardin and J. Oila and K. Saarinen and P. Hautoj{\"a}rvi and E. Tourni{\'e} and Faurie, \{J. P.\} and C. Corbel",

year = "2000",

month = dec,

day = "15",

doi = "10.1103/PhysRevB.62.15711",

language = "English",

volume = "62",

pages = "15711--15717",

journal = "Physical Review B - Condensed Matter and Materials Physics",

issn = "1098-0121",

number = "23",

}

TY - JOUR

T1 - Native vacancies in nitrogen-doped and undoped ZnSe layers studied by positron annihilation

AU - Desgardin, P.

AU - Oila, J.

AU - Saarinen, K.

AU - Hautojärvi, P.

AU - Tournié, E.

AU - Faurie, J. P.

AU - Corbel, C.

PY - 2000/12/15

Y1 - 2000/12/15

N2 - We have used a low-energy positron beam to investigate the defects in N-doped and undoped ZnSe layers grown on GaAs:Si or ZnSe substrates. In N-doped ZnSe we observe positron trapping at vacancies, identified as VSeNSe complexes, and at negative ions. Based on positron data, we give estimates for the concentrations of vacancies and negative ions. The results suggest that in addition to forming isolated NSe acceptors or VSeNSe pairs, incorporated nitrogen also forms donor-type defects leading to compensation of holes. In undoped ZnSe layers, the results show presence of Zn vacancies in concentrations 1016-1017 cm-3. The Zn vacancy concentration correlates with the dislocation density at the ZnSe/GaAs interface.

AB - We have used a low-energy positron beam to investigate the defects in N-doped and undoped ZnSe layers grown on GaAs:Si or ZnSe substrates. In N-doped ZnSe we observe positron trapping at vacancies, identified as VSeNSe complexes, and at negative ions. Based on positron data, we give estimates for the concentrations of vacancies and negative ions. The results suggest that in addition to forming isolated NSe acceptors or VSeNSe pairs, incorporated nitrogen also forms donor-type defects leading to compensation of holes. In undoped ZnSe layers, the results show presence of Zn vacancies in concentrations 1016-1017 cm-3. The Zn vacancy concentration correlates with the dislocation density at the ZnSe/GaAs interface.

U2 - 10.1103/PhysRevB.62.15711

DO - 10.1103/PhysRevB.62.15711

M3 - Article

AN - SCOPUS:0034670839

SN - 1098-0121

VL - 62

SP - 15711

EP - 15717

JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

IS - 23

ER -

Native vacancies in nitrogen-doped and undoped ZnSe layers studied by positron annihilation

Abstract

Access to Document

Fingerprint

Cite this