Near-surface electrical effects of oxidation and hydrogenation in silicon

I. Delidais; D. Ballutaud; A. Boutry-Forveille; J. L. Maurice; M. Aucouturier; B. Leroy

doi:10.1016/0921-5107(89)90257-2

Near-surface electrical effects of oxidation and hydrogenation in silicon

I. Delidais
, D. Ballutaud
, A. Boutry-Forveille
, J. L. Maurice
, M. Aucouturier
, B. Leroy

Centre national de la recherche scientifique
IBM GBS France

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

The effects of oxidation and hydrogenation on the electrical properties of silicon are studied by corroborating secondary ion mass spectroscopy (SIMS) analyses with electron beam induced current (EBIC) measurements. The oxidation cancels the EBIC response in the polycrystalline solargrade material investigated while it enhances this response in a float zone (FZ) reference. The EBIC signal disappearance is associated with the presence of oxygen clusters grown during the oxidation in the near-surface (100 nm) zone. Hydrogenation leads to hydrogen decoration of the oxide precipitates and to complete restoration of the EBIC response.

Original language	English
Pages (from-to)	277-280
Number of pages	4
Journal	Materials Science and Engineering: B
Volume	4
Issue number	1-4
DOIs	https://doi.org/10.1016/0921-5107(89)90257-2
Publication status	Published - 1 Jan 1989

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title = "Near-surface electrical effects of oxidation and hydrogenation in silicon",

abstract = "The effects of oxidation and hydrogenation on the electrical properties of silicon are studied by corroborating secondary ion mass spectroscopy (SIMS) analyses with electron beam induced current (EBIC) measurements. The oxidation cancels the EBIC response in the polycrystalline solargrade material investigated while it enhances this response in a float zone (FZ) reference. The EBIC signal disappearance is associated with the presence of oxygen clusters grown during the oxidation in the near-surface (100 nm) zone. Hydrogenation leads to hydrogen decoration of the oxide precipitates and to complete restoration of the EBIC response.",

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T1 - Near-surface electrical effects of oxidation and hydrogenation in silicon

AU - Delidais, I.

AU - Ballutaud, D.

AU - Boutry-Forveille, A.

AU - Maurice, J. L.

AU - Aucouturier, M.

AU - Leroy, B.

PY - 1989/1/1

Y1 - 1989/1/1

N2 - The effects of oxidation and hydrogenation on the electrical properties of silicon are studied by corroborating secondary ion mass spectroscopy (SIMS) analyses with electron beam induced current (EBIC) measurements. The oxidation cancels the EBIC response in the polycrystalline solargrade material investigated while it enhances this response in a float zone (FZ) reference. The EBIC signal disappearance is associated with the presence of oxygen clusters grown during the oxidation in the near-surface (100 nm) zone. Hydrogenation leads to hydrogen decoration of the oxide precipitates and to complete restoration of the EBIC response.

AB - The effects of oxidation and hydrogenation on the electrical properties of silicon are studied by corroborating secondary ion mass spectroscopy (SIMS) analyses with electron beam induced current (EBIC) measurements. The oxidation cancels the EBIC response in the polycrystalline solargrade material investigated while it enhances this response in a float zone (FZ) reference. The EBIC signal disappearance is associated with the presence of oxygen clusters grown during the oxidation in the near-surface (100 nm) zone. Hydrogenation leads to hydrogen decoration of the oxide precipitates and to complete restoration of the EBIC response.

U2 - 10.1016/0921-5107(89)90257-2

DO - 10.1016/0921-5107(89)90257-2

M3 - Article

AN - SCOPUS:0024750682

SN - 0921-5107

VL - 4

SP - 277

EP - 280

JO - Materials Science and Engineering: B

JF - Materials Science and Engineering: B

IS - 1-4

ER -

Near-surface electrical effects of oxidation and hydrogenation in silicon

Abstract

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