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New Compact Modeling Solutions for Organic and Amorphous Oxide TFTs

  • Benjamin Iñiguez
  • , Arokia Nathan
  • , Alexander Kloes
  • , Yvan Bonnassieux
  • , Krunoslav Romanjek
  • , Micael Charbonneau
  • , Jan Laurens Van Der Steen
  • , Gerwin Gelinck
  • , Thomas Gneiting
  • , Firas Mohamed
  • , Gérard Ghibaudo
  • , Antonio Cerdeira
  • , Magali Estrada
  • , Slobodan Mijalkovic
  • , Ahmed Nejim
  • University RoviraiI Virgili
  • Department of Engineering
  • Technische Hochschule Mittelhessen
  • Univ. Joseph Fourier-Grenoble 1
  • Holst Centre
  • AdMOS GmbH
  • SILVACO FRANCE
  • GPM2-INPG
  • CINVESTAV-IPN
  • Silvaco

Research output: Contribution to journalReview articlepeer-review

19 Citations (Scopus)

Abstract

We review recent compact modeling solutions for Organic and Amorphous Oxide TFTs (OTFTs and AOS TFTs, respectively), which were developed, under the framework of the EU-funded project DOMINO, to address issues specifically connected to the physics of these devices. In particular, using different approaches, analytical equations were formulated to model the Density of States (DOS), different transport mechanisms, trapping/de-trapping, drain current, stress, capacitances, frequency dispersion and noise. The final TFT models were, after implementation in Verilog-A, validated by means of the design and simulation of test circuits.

Original languageEnglish
Pages (from-to)911-932
Number of pages22
JournalIEEE Journal of the Electron Devices Society
Volume9
DOIs
Publication statusPublished - 1 Jan 2021

Keywords

  • Thin film transistors
  • organic thin film transistors
  • semiconductor device modeling
  • semiconductor device noise

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