New design of InGaAs guided-mode resonance photodiode for SWIR low dark current imaging

  • Michaël Verdun
  • , Benjamin Portier
  • , Katarzyna Jaworowicz
  • , Julien Jaeck
  • , Christophe Dupuis
  • , Riad Haidar
  • , Fabrice Pardo
  • , Jean Luc Pelouard

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We investigate a full-dielectric guided mode resonant photodiode. It has been designed to enhance the absorption by excitation of several resonances in the SWIR domain. The device consists of an InP/InGaAs/InP P-i-N heterojunction containing an active layer as thin as 90 nm on top of a subwavelength lamellar grating and a gold mirror. We successfully compared the electro-optical characterizations of individual pixels with electro-magnetic simulations. In particular, we observe near perfect collection of the photo-carriers and external quantum efficiency (EQE) of up to 71% around 1.55 μm. Moreover, compared with InGaAs resonator state-of-The-Art detector, we show a broader spectral response in the 1.2-1.7 μm range, thus paving the way for SWIR low dark current imaging.

Original languageEnglish
Title of host publicationNanophotonics VI
EditorsJean-Michel Nunzi, David L. Andrews, Andreas Ostendorf
PublisherSPIE
ISBN (Electronic)9781510601291
DOIs
Publication statusPublished - 1 Jan 2016
Externally publishedYes
EventNanophotonics VI - Brussels, Belgium
Duration: 3 Apr 20167 Apr 2016

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume9884
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Conference

ConferenceNanophotonics VI
Country/TerritoryBelgium
CityBrussels
Period3/04/167/04/16

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