New method for determining the series resistances in a MESFET or TEGFET

P. Urien; D. Delagebeaudeuf

doi:10.1049/el:19830478

New method for determining the series resistances in a MESFET or TEGFET

P. Urien, D. Delagebeaudeuf

Thales Group

Research output: Contribution to journal › Article › peer-review

Abstract

The forward characteristic of the Schottky gate is generally used in a MESFET (or TEGFET) to measure the source or gate series resistances. An original model describing the FET behaviour when a high current flows through the gate is presented. From this model we deduce simple methods for determination of parasitic resistances.

Original language	English
Pages (from-to)	702-703
Number of pages	2
Journal	Electronics Letters
Volume	19
Issue number	17
DOIs	https://doi.org/10.1049/el:19830478
Publication status	Published - 18 Aug 1983
Externally published	Yes

Keywords

Fieldeffect transistors
Semiconductor devices and materials

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10.1049/el:19830478

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title = "New method for determining the series resistances in a MESFET or TEGFET",

abstract = "The forward characteristic of the Schottky gate is generally used in a MESFET (or TEGFET) to measure the source or gate series resistances. An original model describing the FET behaviour when a high current flows through the gate is presented. From this model we deduce simple methods for determination of parasitic resistances.",

keywords = "Fieldeffect transistors, Semiconductor devices and materials",

author = "P. Urien and D. Delagebeaudeuf",

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AU - Delagebeaudeuf, D.

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N2 - The forward characteristic of the Schottky gate is generally used in a MESFET (or TEGFET) to measure the source or gate series resistances. An original model describing the FET behaviour when a high current flows through the gate is presented. From this model we deduce simple methods for determination of parasitic resistances.

AB - The forward characteristic of the Schottky gate is generally used in a MESFET (or TEGFET) to measure the source or gate series resistances. An original model describing the FET behaviour when a high current flows through the gate is presented. From this model we deduce simple methods for determination of parasitic resistances.

KW - Fieldeffect transistors

KW - Semiconductor devices and materials

U2 - 10.1049/el:19830478

DO - 10.1049/el:19830478

M3 - Article

AN - SCOPUS:0020808231

SN - 0013-5194

VL - 19

SP - 702

EP - 703

JO - Electronics Letters

JF - Electronics Letters

IS - 17

ER -

New method for determining the series resistances in a MESFET or TEGFET

Abstract

Keywords

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