New mid-infrared optical sources based on isotropic semiconductors (zinc selenide and gallium arsenide) using total internal reflection quasi-phase-matching

R. Haïdar, Ph Kupecek, E. Rosencher, R. Triboulet, Ph Lemasson

Research output: Contribution to journalArticlepeer-review

Abstract

The French aerospace agency is involved in the realization of compact solid-state coherent sources, such as optical parametric oscillators (OPO), using new materials, such as highly non-linearly efficient semiconductors (ZnSe, GaAs or InP). However, since these materials are optically Isotropic, they require new phase-matching techniques. We report the quasi-phase matched difference frequency generation in isotropic semiconductors using total internal reflection. We made use of large Fresnel birefringence at reflection between the signal and idler wave outputs of an OPO. Large tunability (between 8 and 13 μm) is demonstrated. Agreement between theoretical expectation and experimental results is excellent.

Original languageEnglish
Pages (from-to)155-160
Number of pages6
JournalOpto-Electronics Review
Volume11
Issue number2
Publication statusPublished - 1 Jan 2003
Externally publishedYes

Keywords

  • Difference frequency generation
  • Fresnel birefringence
  • Isotropic semiconductors
  • Mid-infrared light
  • Non-linear optics
  • Quasi-phase matching

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