New spin filter: the magnetic Schottky diode

A. Filipe; H. J. Drouhin; G. Lampel; Y. Lassailly; J. Peretti; V. I. Safarov; A. Schuhl

New spin filter: the magnetic Schottky diode

A. Filipe
, H. J. Drouhin
, G. Lampel
, Y. Lassailly
, J. Peretti
, V. I. Safarov
, A. Schuhl

Lab Central de Recherches

Research output: Contribution to journal › Conference article › peer-review

Abstract

We observe spin-dependent transmission of hot electrons through the ferromagnetic metallic layer of a Schottky diode. A 25% spin-polarized electron beam is produced in vacuum by a GaAs photocathode under illumination with circularly polarized light. The photoemitted electrons are then injected from the vacuum into the sample: a 3.5 nm-thick Fe layer deposited on a n-doped GaAs substrate. We measure a transmission coefficient of the order of a few 10^-4. Using an incident energy above the Fermi level equal to 5 eV, a 5% asymmetry in the transmitted current is observed by changing the spin-polarization of the incident electrons (i.e. the light polarization) and/or reversing the Fe-layer magnetization. This corresponds to a transmission spin-dependence of 20% for a 100% spin-polarized incident beam.

Original language	English
Pages (from-to)	75-80
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	475
Publication status	Published - 1 Dec 1997
Externally published	Yes
Event	Proceedings of the 1997 MRS Spring Meeting - San Francisco, CA, USA Duration: 31 Mar 1997 → 2 Apr 1997

Cite this

@article{48219d78f0be49779b37cf6fe2ee2af4,

title = "New spin filter: the magnetic Schottky diode",

abstract = "We observe spin-dependent transmission of hot electrons through the ferromagnetic metallic layer of a Schottky diode. A 25\% spin-polarized electron beam is produced in vacuum by a GaAs photocathode under illumination with circularly polarized light. The photoemitted electrons are then injected from the vacuum into the sample: a 3.5 nm-thick Fe layer deposited on a n-doped GaAs substrate. We measure a transmission coefficient of the order of a few 10-4. Using an incident energy above the Fermi level equal to 5 eV, a 5\% asymmetry in the transmitted current is observed by changing the spin-polarization of the incident electrons (i.e. the light polarization) and/or reversing the Fe-layer magnetization. This corresponds to a transmission spin-dependence of 20\% for a 100\% spin-polarized incident beam.",

author = "A. Filipe and Drouhin, \{H. J.\} and G. Lampel and Y. Lassailly and J. Peretti and Safarov, \{V. I.\} and A. Schuhl",

year = "1997",

month = dec,

day = "1",

language = "English",

volume = "475",

pages = "75--80",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

note = "Proceedings of the 1997 MRS Spring Meeting ; Conference date: 31-03-1997 Through 02-04-1997",

}

TY - JOUR

T1 - New spin filter

T2 - Proceedings of the 1997 MRS Spring Meeting

AU - Filipe, A.

AU - Drouhin, H. J.

AU - Lampel, G.

AU - Lassailly, Y.

AU - Peretti, J.

AU - Safarov, V. I.

AU - Schuhl, A.

PY - 1997/12/1

Y1 - 1997/12/1

N2 - We observe spin-dependent transmission of hot electrons through the ferromagnetic metallic layer of a Schottky diode. A 25% spin-polarized electron beam is produced in vacuum by a GaAs photocathode under illumination with circularly polarized light. The photoemitted electrons are then injected from the vacuum into the sample: a 3.5 nm-thick Fe layer deposited on a n-doped GaAs substrate. We measure a transmission coefficient of the order of a few 10-4. Using an incident energy above the Fermi level equal to 5 eV, a 5% asymmetry in the transmitted current is observed by changing the spin-polarization of the incident electrons (i.e. the light polarization) and/or reversing the Fe-layer magnetization. This corresponds to a transmission spin-dependence of 20% for a 100% spin-polarized incident beam.

AB - We observe spin-dependent transmission of hot electrons through the ferromagnetic metallic layer of a Schottky diode. A 25% spin-polarized electron beam is produced in vacuum by a GaAs photocathode under illumination with circularly polarized light. The photoemitted electrons are then injected from the vacuum into the sample: a 3.5 nm-thick Fe layer deposited on a n-doped GaAs substrate. We measure a transmission coefficient of the order of a few 10-4. Using an incident energy above the Fermi level equal to 5 eV, a 5% asymmetry in the transmitted current is observed by changing the spin-polarization of the incident electrons (i.e. the light polarization) and/or reversing the Fe-layer magnetization. This corresponds to a transmission spin-dependence of 20% for a 100% spin-polarized incident beam.

UR - https://www.scopus.com/pages/publications/0031387192

M3 - Conference article

AN - SCOPUS:0031387192

SN - 0272-9172

VL - 475

SP - 75

EP - 80

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

Y2 - 31 March 1997 through 2 April 1997

ER -

New spin filter: the magnetic Schottky diode

Abstract

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