Abstract
This paper presents a new structure for a silicon MMIC sixport reflectometer. Its originality lies in the use of a new developed power detector using a silicon MOSFET transistor as an alternative to the common used biased Schottky diode detector. The power detector using a non biased MOSFET transistor has demonstrated a better sensitivity than the Schottky diode detector counterpart. The six-port reflectometer calibration uses a minimum of five loads with an unknown but constant absolute value of the reflection coefficient and unknown but well-distributed phases. The circuit has been fabricated in silicon MMIC technology working between 0.9-3.0 GHz. A thorough comparison of the measured data with a commercial network analyzer is presented.
| Original language | English |
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| Pages (from-to) | 1647-1650 |
| Number of pages | 4 |
| Journal | IEEE MTT-S International Microwave Symposium Digest |
| Volume | 4 |
| Publication status | Published - 1 Dec 1999 |
| Event | Proceedings of the 1999 IEEE MTT-S International Microwave Symposium Digest 'The Magic Touch of Microwaves' - Anaheim, CA, USA Duration: 13 Jun 1999 → 19 Jun 1999 |