No benefit from microcrystalline silicon N layers in single junction amorphous silicon p-i-n solar cells

Y. Poissant; P. Chatterjee; P. Roca i Cabarrocas

doi:10.1063/1.1524026

No benefit from microcrystalline silicon N layers in single junction amorphous silicon p-i-n solar cells

Y. Poissant
, P. Chatterjee
, P. Roca i Cabarrocas

Research output: Contribution to journal › Article › peer-review

Abstract

The use of phosphorous-doped microcrystalline silicon as the n-type electrode in single junction hydrogenated amorphous silicon solar cells was analyzed. The output characteristics of the solar cells indicated a sharp localization of the field at the N/I interface of the cell. The results showed that the use of microcrystalline N layers in single junction solar cells could not enhance the open-circuit voltage and overall cell efficiency.

Original language	English
Pages (from-to)	170-174
Number of pages	5
Journal	Journal of Applied Physics
Volume	93
Issue number	1
DOIs	https://doi.org/10.1063/1.1524026
Publication status	Published - 1 Jan 2003

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@article{4069362216214dec9ab4c2145ca3cba0,

title = "No benefit from microcrystalline silicon N layers in single junction amorphous silicon p-i-n solar cells",

abstract = "The use of phosphorous-doped microcrystalline silicon as the n-type electrode in single junction hydrogenated amorphous silicon solar cells was analyzed. The output characteristics of the solar cells indicated a sharp localization of the field at the N/I interface of the cell. The results showed that the use of microcrystalline N layers in single junction solar cells could not enhance the open-circuit voltage and overall cell efficiency.",

author = "Y. Poissant and P. Chatterjee and \{Roca i Cabarrocas\}, P.",

year = "2003",

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AU - Poissant, Y.

AU - Chatterjee, P.

AU - Roca i Cabarrocas, P.

PY - 2003/1/1

Y1 - 2003/1/1

N2 - The use of phosphorous-doped microcrystalline silicon as the n-type electrode in single junction hydrogenated amorphous silicon solar cells was analyzed. The output characteristics of the solar cells indicated a sharp localization of the field at the N/I interface of the cell. The results showed that the use of microcrystalline N layers in single junction solar cells could not enhance the open-circuit voltage and overall cell efficiency.

AB - The use of phosphorous-doped microcrystalline silicon as the n-type electrode in single junction hydrogenated amorphous silicon solar cells was analyzed. The output characteristics of the solar cells indicated a sharp localization of the field at the N/I interface of the cell. The results showed that the use of microcrystalline N layers in single junction solar cells could not enhance the open-circuit voltage and overall cell efficiency.

U2 - 10.1063/1.1524026

DO - 10.1063/1.1524026

M3 - Article

AN - SCOPUS:0037245820

SN - 0021-8979

VL - 93

SP - 170

EP - 174

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 1

ER -

No benefit from microcrystalline silicon N layers in single junction amorphous silicon p-i-n solar cells

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