Abstract
We investigate the nonequilibrium transport near a quantum phase transition in a generic and relatively simple model, the dissipative resonant level model, that has many applications for nanosystems. We formulate a rigorous mapping and apply a controlled frequency-dependent renormalization group approach to compute the nonequilibrium current in the presence of a finite bias voltage V and a finite temperature T. For V→0, we find that the conductance has its well-known equilibrium form, while it displays a distinct nonequilibrium profile at finite voltage.
| Original language | English |
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| Article number | 216803 |
| Journal | Physical Review Letters |
| Volume | 102 |
| Issue number | 21 |
| DOIs | |
| Publication status | Published - 26 May 2009 |
| Externally published | Yes |