Nonguiding half-wave semiconductor microcavities displaying the exciton-photon mode splitting

I. Abram; S. Iung; R. Kuszelewicz; G. Le Roux; C. Licoppe; J. L. Oudar; E. V.K. Rao; J. I. Bloch; R. Planel; V. Thierry-Mieg

doi:10.1063/1.112621

Nonguiding half-wave semiconductor microcavities displaying the exciton-photon mode splitting

I. Abram
, S. Iung
, R. Kuszelewicz
, G. Le Roux
, C. Licoppe
, J. L. Oudar
, E. V.K. Rao
, J. I. Bloch
, R. Planel
, V. Thierry-Mieg

École Polytechnique

Research output: Contribution to journal › Article › peer-review

Abstract

We present a monolithic epitaxially grown λ/2 semiconductor microcavity that contains two InGaAs quantum wells in its AlAs spacer. This particular design displays greatly reduced coupling of the quantum well emission to the in-plane guided modes. The reflection and luminescence spectra of this structure at 77-K display an exciton-photon splitting of 4 meV with as few as two quantum wells, indicating the possibility of a strong coupling of the spontaneous emission of the excitons to the vertical cavity modes. This cavity design should thus be well suited for improving the coupling efficiency of the spontaneous emission to the lasing mode in vertically emitting structures.

Original language	English
Pages (from-to)	2516-2518
Number of pages	3
Journal	Applied Physics Letters
Volume	65
Issue number	20
DOIs	https://doi.org/10.1063/1.112621
Publication status	Published - 1 Dec 1994

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10.1063/1.112621

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@article{7fb51ecd46b54efa947f591ab421cde0,

title = "Nonguiding half-wave semiconductor microcavities displaying the exciton-photon mode splitting",

abstract = "We present a monolithic epitaxially grown λ/2 semiconductor microcavity that contains two InGaAs quantum wells in its AlAs spacer. This particular design displays greatly reduced coupling of the quantum well emission to the in-plane guided modes. The reflection and luminescence spectra of this structure at 77-K display an exciton-photon splitting of 4 meV with as few as two quantum wells, indicating the possibility of a strong coupling of the spontaneous emission of the excitons to the vertical cavity modes. This cavity design should thus be well suited for improving the coupling efficiency of the spontaneous emission to the lasing mode in vertically emitting structures.",

author = "I. Abram and S. Iung and R. Kuszelewicz and \{Le Roux\}, G. and C. Licoppe and Oudar, \{J. L.\} and Rao, \{E. V.K.\} and Bloch, \{J. I.\} and R. Planel and V. Thierry-Mieg",

year = "1994",

month = dec,

day = "1",

doi = "10.1063/1.112621",

language = "English",

volume = "65",

pages = "2516--2518",

journal = "Applied Physics Letters",

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TY - JOUR

T1 - Nonguiding half-wave semiconductor microcavities displaying the exciton-photon mode splitting

AU - Abram, I.

AU - Iung, S.

AU - Kuszelewicz, R.

AU - Le Roux, G.

AU - Licoppe, C.

AU - Oudar, J. L.

AU - Rao, E. V.K.

AU - Bloch, J. I.

AU - Planel, R.

AU - Thierry-Mieg, V.

PY - 1994/12/1

Y1 - 1994/12/1

N2 - We present a monolithic epitaxially grown λ/2 semiconductor microcavity that contains two InGaAs quantum wells in its AlAs spacer. This particular design displays greatly reduced coupling of the quantum well emission to the in-plane guided modes. The reflection and luminescence spectra of this structure at 77-K display an exciton-photon splitting of 4 meV with as few as two quantum wells, indicating the possibility of a strong coupling of the spontaneous emission of the excitons to the vertical cavity modes. This cavity design should thus be well suited for improving the coupling efficiency of the spontaneous emission to the lasing mode in vertically emitting structures.

AB - We present a monolithic epitaxially grown λ/2 semiconductor microcavity that contains two InGaAs quantum wells in its AlAs spacer. This particular design displays greatly reduced coupling of the quantum well emission to the in-plane guided modes. The reflection and luminescence spectra of this structure at 77-K display an exciton-photon splitting of 4 meV with as few as two quantum wells, indicating the possibility of a strong coupling of the spontaneous emission of the excitons to the vertical cavity modes. This cavity design should thus be well suited for improving the coupling efficiency of the spontaneous emission to the lasing mode in vertically emitting structures.

U2 - 10.1063/1.112621

DO - 10.1063/1.112621

M3 - Article

AN - SCOPUS:0001463822

SN - 0003-6951

VL - 65

SP - 2516

EP - 2518

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 20

ER -

Nonguiding half-wave semiconductor microcavities displaying the exciton-photon mode splitting

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