Abstract
A mesoscopic nonmagnetic magnetoresistive read-head sensor based on the recently reported extraordinary magnetoresistance (EMR) effect has been fabricated from a narrow-gap Si-doped InSb quantum well. The sensor has a conservatively estimated areal-density of 116 Gb/in.2 with a 300 K EMR of 6% and a current sensitivity of 147 /T at a relevant field of 0.05 T and a bias of 0.27 T. Because this sensor is not subject to magnetic noise, which limits conventional sensors to areal densities of order 100 Gb/in.2, it opens a pathway to ultra-high-density recording at areal densities of order 1 Tb/in.2.
| Original language | English |
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| Pages (from-to) | 4012-4014 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 80 |
| Issue number | 21 |
| DOIs | |
| Publication status | Published - 27 May 2002 |
| Externally published | Yes |