Normal-incidence intersubband absorption in AlGaSb quantum wells: Enhanced oscillator strength and new functionalities using asymmetry

J. M. Jancu; P. Senellart; E. Peter; V. Berger; F. Chevrier; A. Joullié; C. Alibert; O. Krebs; P. Voisin

doi:10.1049/ip-opt:20030722

Normal-incidence intersubband absorption in AlGaSb quantum wells: Enhanced oscillator strength and new functionalities using asymmetry

J. M. Jancu
, P. Senellart
, E. Peter
, V. Berger
, F. Chevrier
, A. Joullié
, C. Alibert
, O. Krebs
, P. Voisin

Scuola Normale Superiore di Pisa
Laboratoire de Probabilités et Modèles Aléatoires
Centre de Nanosciences et de Nanotechnologies
University of Montpellier (UMR MiVEGEC)

Research output: Contribution to journal › Article › peer-review

Abstract

The properties of intersubband transitions in L-valley GaAlSb-AlSb quantum wells are reinvestigated using the extended-basis sp³d⁵s^* tight binding model. New functionalities for mid-infrared photodetection, associated with normal incidence and the use of asymmetric quantum wells, are also discussed.

Original language	English
Pages (from-to)	381-384
Number of pages	4
Journal	IEE Proceedings: Optoelectronics
Volume	150
Issue number	4
DOIs	https://doi.org/10.1049/ip-opt:20030722
Publication status	Published - 1 Aug 2003
Externally published	Yes

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10.1049/ip-opt:20030722

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@article{60c8661da5e24ad085deb6167a3bb347,

title = "Normal-incidence intersubband absorption in AlGaSb quantum wells: Enhanced oscillator strength and new functionalities using asymmetry",

abstract = "The properties of intersubband transitions in L-valley GaAlSb-AlSb quantum wells are reinvestigated using the extended-basis sp3d5s* tight binding model. New functionalities for mid-infrared photodetection, associated with normal incidence and the use of asymmetric quantum wells, are also discussed.",

author = "Jancu, \{J. M.\} and P. Senellart and E. Peter and V. Berger and F. Chevrier and A. Joulli{\'e} and C. Alibert and O. Krebs and P. Voisin",

year = "2003",

month = aug,

day = "1",

doi = "10.1049/ip-opt:20030722",

language = "English",

volume = "150",

pages = "381--384",

journal = "IEE Proceedings: Optoelectronics",

issn = "1350-2433",

publisher = "Institution of Engineering and Technology",

number = "4",

}

TY - JOUR

T1 - Normal-incidence intersubband absorption in AlGaSb quantum wells

T2 - Enhanced oscillator strength and new functionalities using asymmetry

AU - Jancu, J. M.

AU - Senellart, P.

AU - Peter, E.

AU - Berger, V.

AU - Chevrier, F.

AU - Joullié, A.

AU - Alibert, C.

AU - Krebs, O.

AU - Voisin, P.

PY - 2003/8/1

Y1 - 2003/8/1

N2 - The properties of intersubband transitions in L-valley GaAlSb-AlSb quantum wells are reinvestigated using the extended-basis sp3d5s* tight binding model. New functionalities for mid-infrared photodetection, associated with normal incidence and the use of asymmetric quantum wells, are also discussed.

AB - The properties of intersubband transitions in L-valley GaAlSb-AlSb quantum wells are reinvestigated using the extended-basis sp3d5s* tight binding model. New functionalities for mid-infrared photodetection, associated with normal incidence and the use of asymmetric quantum wells, are also discussed.

U2 - 10.1049/ip-opt:20030722

DO - 10.1049/ip-opt:20030722

M3 - Article

AN - SCOPUS:0344465474

SN - 1350-2433

VL - 150

SP - 381

EP - 384

JO - IEE Proceedings: Optoelectronics

JF - IEE Proceedings: Optoelectronics

IS - 4

ER -

Normal-incidence intersubband absorption in AlGaSb quantum wells: Enhanced oscillator strength and new functionalities using asymmetry

Abstract

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