Notice of Removal: Nanoscale investigation of carrier lifetime on the cross-section of epitaxial silicon solar cells using Kelvin probe force microscopy

Paul Narchi; Romain Cariou; Martin Foldyna; Patricia Prod'Homme; Pere Roca I. Cabarrocas

doi:10.1109/PVSC.2017.8366875

Notice of Removal: Nanoscale investigation of carrier lifetime on the cross-section of epitaxial silicon solar cells using Kelvin probe force microscopy

Paul Narchi
, Romain Cariou
, Martin Foldyna
, Patricia Prod'Homme
, Pere Roca I. Cabarrocas

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Nanoscale investigation of material properties is of high interest for improving photovoltaic devices. In this work, we present a technique to assess minority carrier lifetime at nanoscale. To do so, we use Kelvin Probe Force Microscopy on the cross-section of an epitaxial silicon solar cell under modulated frequency electrical bias. Our measurements present a good spatial and temporal agreement with standard material characterization techniques.

Original language	English
Title of host publication	2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1-6
Number of pages	6
ISBN (Electronic)	9781509056057
DOIs	https://doi.org/10.1109/PVSC.2017.8366875
Publication status	Published - 1 Jan 2017
Event	44th IEEE Photovoltaic Specialist Conference, PVSC 2017 - Washington, United States Duration: 25 Jun 2017 → 30 Jun 2017

Publication series

Name	2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017

Conference

Conference	44th IEEE Photovoltaic Specialist Conference, PVSC 2017
Country/Territory	United States
City	Washington
Period	25/06/17 → 30/06/17

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

Carrier Lifetime
Epitaxial Silicon
Kelvin Probe Force Microscopy
Modulated Frequency
Silicon
Thin Film Solar Cells

Access to Document

10.1109/PVSC.2017.8366875

Cite this

Narchi, P., Cariou, R., Foldyna, M., Prod'Homme, P., & Cabarrocas, P. R. I. (2017). Notice of Removal: Nanoscale investigation of carrier lifetime on the cross-section of epitaxial silicon solar cells using Kelvin probe force microscopy. In 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017 (pp. 1-6). (2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2017.8366875

Narchi, Paul ; Cariou, Romain ; Foldyna, Martin et al. / Notice of Removal : Nanoscale investigation of carrier lifetime on the cross-section of epitaxial silicon solar cells using Kelvin probe force microscopy. 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers Inc., 2017. pp. 1-6 (2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017).

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title = "Notice of Removal: Nanoscale investigation of carrier lifetime on the cross-section of epitaxial silicon solar cells using Kelvin probe force microscopy",

abstract = "Nanoscale investigation of material properties is of high interest for improving photovoltaic devices. In this work, we present a technique to assess minority carrier lifetime at nanoscale. To do so, we use Kelvin Probe Force Microscopy on the cross-section of an epitaxial silicon solar cell under modulated frequency electrical bias. Our measurements present a good spatial and temporal agreement with standard material characterization techniques.",

keywords = "Carrier Lifetime, Epitaxial Silicon, Kelvin Probe Force Microscopy, Modulated Frequency, Silicon, Thin Film Solar Cells",

author = "Paul Narchi and Romain Cariou and Martin Foldyna and Patricia Prod'Homme and Cabarrocas, \{Pere Roca I.\}",

note = "Publisher Copyright: {\textcopyright} 2017 IEEE.; 44th IEEE Photovoltaic Specialist Conference, PVSC 2017 ; Conference date: 25-06-2017 Through 30-06-2017",

year = "2017",

month = jan,

day = "1",

doi = "10.1109/PVSC.2017.8366875",

language = "English",

series = "2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "1--6",

booktitle = "2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017",

}

Narchi, P, Cariou, R, Foldyna, M, Prod'Homme, P & Cabarrocas, PRI 2017, Notice of Removal: Nanoscale investigation of carrier lifetime on the cross-section of epitaxial silicon solar cells using Kelvin probe force microscopy. in 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017, Institute of Electrical and Electronics Engineers Inc., pp. 1-6, 44th IEEE Photovoltaic Specialist Conference, PVSC 2017, Washington, United States, 25/06/17. https://doi.org/10.1109/PVSC.2017.8366875

Notice of Removal: Nanoscale investigation of carrier lifetime on the cross-section of epitaxial silicon solar cells using Kelvin probe force microscopy. / Narchi, Paul; Cariou, Romain; Foldyna, Martin et al.
2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers Inc., 2017. p. 1-6 (2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Notice of Removal

T2 - 44th IEEE Photovoltaic Specialist Conference, PVSC 2017

AU - Narchi, Paul

AU - Cariou, Romain

AU - Foldyna, Martin

AU - Prod'Homme, Patricia

AU - Cabarrocas, Pere Roca I.

PY - 2017/1/1

Y1 - 2017/1/1

N2 - Nanoscale investigation of material properties is of high interest for improving photovoltaic devices. In this work, we present a technique to assess minority carrier lifetime at nanoscale. To do so, we use Kelvin Probe Force Microscopy on the cross-section of an epitaxial silicon solar cell under modulated frequency electrical bias. Our measurements present a good spatial and temporal agreement with standard material characterization techniques.

AB - Nanoscale investigation of material properties is of high interest for improving photovoltaic devices. In this work, we present a technique to assess minority carrier lifetime at nanoscale. To do so, we use Kelvin Probe Force Microscopy on the cross-section of an epitaxial silicon solar cell under modulated frequency electrical bias. Our measurements present a good spatial and temporal agreement with standard material characterization techniques.

KW - Carrier Lifetime

KW - Epitaxial Silicon

KW - Kelvin Probe Force Microscopy

KW - Modulated Frequency

KW - Silicon

KW - Thin Film Solar Cells

UR - https://www.scopus.com/pages/publications/85048510722

U2 - 10.1109/PVSC.2017.8366875

DO - 10.1109/PVSC.2017.8366875

M3 - Conference contribution

AN - SCOPUS:85048510722

T3 - 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017

SP - 1

EP - 6

BT - 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017

PB - Institute of Electrical and Electronics Engineers Inc.

Y2 - 25 June 2017 through 30 June 2017

ER -

Narchi P, Cariou R, Foldyna M, Prod'Homme P, Cabarrocas PRI. Notice of Removal: Nanoscale investigation of carrier lifetime on the cross-section of epitaxial silicon solar cells using Kelvin probe force microscopy. In 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers Inc. 2017. p. 1-6. (2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017). doi: 10.1109/PVSC.2017.8366875

Notice of Removal: Nanoscale investigation of carrier lifetime on the cross-section of epitaxial silicon solar cells using Kelvin probe force microscopy

Abstract

Publication series

Conference

UN SDGs

Keywords

Access to Document

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