Novel photoemission approach to hot-electron transport in semiconductors

J. Peretti; H. J. Drouhin; D. Paget

doi:10.1103/PhysRevLett.64.1682

Novel photoemission approach to hot-electron transport in semiconductors

J. Peretti
, H. J. Drouhin
, D. Paget

Research output: Contribution to journal › Article › peer-review

Abstract

We have performed high-resolution energy analysis of the near-band-gap photoemission of a p-type InP/Ag Schottky diode under electrical bias. This original technique brings direct information on high-electric-field electron transport in semiconductors. From our experimental data, using simple models, we estimate characteristic phonon emission times in an energy range which spans the whole first conduction band, and we evidence an efficient "6-X6 intervalley transfer.

Original language	English
Pages (from-to)	1682-1685
Number of pages	4
Journal	Physical Review Letters
Volume	64
Issue number	14
DOIs	https://doi.org/10.1103/PhysRevLett.64.1682
Publication status	Published - 1 Jan 1990

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10.1103/PhysRevLett.64.1682

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title = "Novel photoemission approach to hot-electron transport in semiconductors",

abstract = "We have performed high-resolution energy analysis of the near-band-gap photoemission of a p-type InP/Ag Schottky diode under electrical bias. This original technique brings direct information on high-electric-field electron transport in semiconductors. From our experimental data, using simple models, we estimate characteristic phonon emission times in an energy range which spans the whole first conduction band, and we evidence an efficient {"}6-X6 intervalley transfer.",

author = "J. Peretti and Drouhin, \{H. J.\} and D. Paget",

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AU - Paget, D.

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N2 - We have performed high-resolution energy analysis of the near-band-gap photoemission of a p-type InP/Ag Schottky diode under electrical bias. This original technique brings direct information on high-electric-field electron transport in semiconductors. From our experimental data, using simple models, we estimate characteristic phonon emission times in an energy range which spans the whole first conduction band, and we evidence an efficient "6-X6 intervalley transfer.

AB - We have performed high-resolution energy analysis of the near-band-gap photoemission of a p-type InP/Ag Schottky diode under electrical bias. This original technique brings direct information on high-electric-field electron transport in semiconductors. From our experimental data, using simple models, we estimate characteristic phonon emission times in an energy range which spans the whole first conduction band, and we evidence an efficient "6-X6 intervalley transfer.

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DO - 10.1103/PhysRevLett.64.1682

M3 - Article

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JO - Physical Review Letters

JF - Physical Review Letters

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Novel photoemission approach to hot-electron transport in semiconductors

Abstract

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