Numerical modeling of steady state photoconductivity process in highly crystallized undoped μc-Si:H films

Sanjay K. Ram; Satyendra Kumar; P. Roca i Cabarrocas

doi:10.1016/j.tsf.2007.01.018

Numerical modeling of steady state photoconductivity process in highly crystallized undoped μc-Si:H films

Sanjay K. Ram
, Satyendra Kumar
, P. Roca i Cabarrocas

Indian Institute of Technology Kanpur

Research output: Contribution to journal › Article › peer-review

Abstract

The steady state photoconductivity as a function of temperature and light intensity was measured on plasma-deposited highly crystalline undoped hydrogenated microcrystalline silicon (μc-Si:H) thin films possessing different microstructure and morphology. Different phototransport behaviors were observed in films having dissimilar microstructural attributes and we have shown this to be linked to different features of the density of states (DOS) in the gap. The phototransport properties of μc-Si:H films having small grains, high density of inter-grain and inter-columnar boundary regions containing disordered phase show light intensity exponent (γ) variation between 0.5 and 1, and thermal quenching effect in temperature-dependent photoconductivity. Based on our mutually corroborative simulation and experimental results, we have proposed the effective DOS maps for the μc-Si:H system, which differ for films having different microstructures.

Original language	English
Pages (from-to)	7576-7580
Number of pages	5
Journal	Thin Solid Films
Volume	515
Issue number	19 SPEC. ISS.
DOIs	https://doi.org/10.1016/j.tsf.2007.01.018
Publication status	Published - 16 Jul 2007

Keywords

Band structure
Computer simulation
Electrical and electronic properties
Modeling and simulation
Photoconductivity
Silicon
Thin films

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10.1016/j.tsf.2007.01.018

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title = "Numerical modeling of steady state photoconductivity process in highly crystallized undoped μc-Si:H films",

abstract = "The steady state photoconductivity as a function of temperature and light intensity was measured on plasma-deposited highly crystalline undoped hydrogenated microcrystalline silicon (μc-Si:H) thin films possessing different microstructure and morphology. Different phototransport behaviors were observed in films having dissimilar microstructural attributes and we have shown this to be linked to different features of the density of states (DOS) in the gap. The phototransport properties of μc-Si:H films having small grains, high density of inter-grain and inter-columnar boundary regions containing disordered phase show light intensity exponent (γ) variation between 0.5 and 1, and thermal quenching effect in temperature-dependent photoconductivity. Based on our mutually corroborative simulation and experimental results, we have proposed the effective DOS maps for the μc-Si:H system, which differ for films having different microstructures.",

keywords = "Band structure, Computer simulation, Electrical and electronic properties, Modeling and simulation, Photoconductivity, Silicon, Thin films",

author = "Ram, \{Sanjay K.\} and Satyendra Kumar and \{Roca i Cabarrocas\}, P.",

year = "2007",

month = jul,

day = "16",

doi = "10.1016/j.tsf.2007.01.018",

language = "English",

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journal = "Thin Solid Films",

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TY - JOUR

T1 - Numerical modeling of steady state photoconductivity process in highly crystallized undoped μc-Si:H films

AU - Ram, Sanjay K.

AU - Kumar, Satyendra

AU - Roca i Cabarrocas, P.

PY - 2007/7/16

Y1 - 2007/7/16

N2 - The steady state photoconductivity as a function of temperature and light intensity was measured on plasma-deposited highly crystalline undoped hydrogenated microcrystalline silicon (μc-Si:H) thin films possessing different microstructure and morphology. Different phototransport behaviors were observed in films having dissimilar microstructural attributes and we have shown this to be linked to different features of the density of states (DOS) in the gap. The phototransport properties of μc-Si:H films having small grains, high density of inter-grain and inter-columnar boundary regions containing disordered phase show light intensity exponent (γ) variation between 0.5 and 1, and thermal quenching effect in temperature-dependent photoconductivity. Based on our mutually corroborative simulation and experimental results, we have proposed the effective DOS maps for the μc-Si:H system, which differ for films having different microstructures.

AB - The steady state photoconductivity as a function of temperature and light intensity was measured on plasma-deposited highly crystalline undoped hydrogenated microcrystalline silicon (μc-Si:H) thin films possessing different microstructure and morphology. Different phototransport behaviors were observed in films having dissimilar microstructural attributes and we have shown this to be linked to different features of the density of states (DOS) in the gap. The phototransport properties of μc-Si:H films having small grains, high density of inter-grain and inter-columnar boundary regions containing disordered phase show light intensity exponent (γ) variation between 0.5 and 1, and thermal quenching effect in temperature-dependent photoconductivity. Based on our mutually corroborative simulation and experimental results, we have proposed the effective DOS maps for the μc-Si:H system, which differ for films having different microstructures.

KW - Band structure

KW - Computer simulation

KW - Electrical and electronic properties

KW - Modeling and simulation

KW - Photoconductivity

KW - Silicon

KW - Thin films

U2 - 10.1016/j.tsf.2007.01.018

DO - 10.1016/j.tsf.2007.01.018

M3 - Article

AN - SCOPUS:34547609743

SN - 0040-6090

VL - 515

SP - 7576

EP - 7580

JO - Thin Solid Films

JF - Thin Solid Films

IS - 19 SPEC. ISS.

ER -

Numerical modeling of steady state photoconductivity process in highly crystallized undoped μc-Si:H films

Abstract

Keywords

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