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Observation of a long-lived polariton state in semiconductor microcavities

  • D. Ballarini
  • , A. Amo
  • , D. Sanvitto
  • , M. D. Martin
  • , L. Viña
  • , M. Wouters
  • , I. Carusotto
  • , A. Lemaitre
  • , J. Bloch

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The spectrum of a polariton optical parametric oscillator (OPO) around the signal state is investigated by means of a novel experimental configuration, which allows for the observation of the imaginary part of the OPO elementary excitations. Using continuous-wave resonant excitation, around the inflection point of the lower polariton dispersion, with a pulsed-probe, resonant at the idler position, we obtain the long dynamics behavior around the signal state. This allows the study of the damping rate of the OPO's signal state as a function of pump intensity by means of time- and energy-resolved photoluminescence. At high pump intensities, the lifetime of the perturbed signal is observed to be orders of magnitude (nanoseconds) longer than the intrinsic cavity lifetime (picoseconds). These results are in agreement with calculations of the self-energy of the excitations around the signal state.

Original languageEnglish
Title of host publicationPhysics of Semiconductors - 29th International Conference, ICPS 29
Pages165-166
Number of pages2
DOIs
Publication statusPublished - 1 Dec 2009
Event29th International Conference on Physics of Semiconductors, ICPS 29 - Rio de Janeiro, Brazil
Duration: 27 Jul 20081 Aug 2008

Publication series

NameAIP Conference Proceedings
Volume1199
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Conference

Conference29th International Conference on Physics of Semiconductors, ICPS 29
Country/TerritoryBrazil
CityRio de Janeiro
Period27/07/081/08/08

Keywords

  • Goldstone modes
  • Microcavities
  • OPO

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