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Observation of a monovacancy in the metastable state of the EL2 defect in GaAs by positron annihilation

  • R. Krause
  • , K. Saarinen
  • , P. Hautojärvi
  • , A. Polity
  • , G. Gärtner
  • , C. Corbel
  • Laboratory of Physics
  • Aalto University
  • Department of Physics
  • Martin Luther University Halle-Wittenberg
  • TU Bergakademie Freiberg
  • Institut National des Sciences et Techniques Nucléaires

Research output: Contribution to journal › Article › peer-review

72 Citations (Scopus)

Abstract

A monovacancy defect is observed by positron-lifetime and Doppler-broadening experiments in semi-insulating GaAs after photoquenching the EL2 defects. The monovacancy exhibits the same thermal and optical recoveries as the metastable state of EL2 and its concentration is proportional to that of the EL2 defect. It is concluded that the metastable state of the EL2 defect involves the monovacancy. The results indiacte that the monovacancy or its immediate surroundings is negatively charged.

Original languageEnglish
Pages (from-to)3329-3332
Number of pages4
JournalPhysical Review Letters
Volume65
Issue number26
DOIs
Publication statusPublished - 1 Jan 1990
Externally publishedYes

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