Observation of Ga vacancies in silicon δ-doping superlattices in (001) GaAs

T. Laine; K. Saarinen; J. Mäkinen; P. Hautojärvi; C. Corbel; M. J. Ashwin; R. C. Newman

doi:10.1063/1.119417

Observation of Ga vacancies in silicon δ-doping superlattices in (001) GaAs

T. Laine
, K. Saarinen
, J. Mäkinen
, P. Hautojärvi
, C. Corbel
, M. J. Ashwin
, R. C. Newman

Research output: Contribution to journal › Article › peer-review

Abstract

Positron annihilation experiments have been performed to investigate the compensating defects in silicon δ-doping superlattices in (001) GaAs. The results reveal vacancies and ion-type defects, which are located between the delta planes in undoped GaAs. The vacancy defect is identified as the Ga vacancy and the negative ion is attributed to the Ga antisite. The concentrations of these defects increase strongly, when the areal concentrations of free carriers are reduced at the delta planes.

Original language	English
Pages (from-to)	1843-1845
Number of pages	3
Journal	Applied Physics Letters
Volume	71
Issue number	13
DOIs	https://doi.org/10.1063/1.119417
Publication status	Published - 29 Sept 1997
Externally published	Yes

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10.1063/1.119417

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abstract = "Positron annihilation experiments have been performed to investigate the compensating defects in silicon δ-doping superlattices in (001) GaAs. The results reveal vacancies and ion-type defects, which are located between the delta planes in undoped GaAs. The vacancy defect is identified as the Ga vacancy and the negative ion is attributed to the Ga antisite. The concentrations of these defects increase strongly, when the areal concentrations of free carriers are reduced at the delta planes.",

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T1 - Observation of Ga vacancies in silicon δ-doping superlattices in (001) GaAs

AU - Laine, T.

AU - Saarinen, K.

AU - Mäkinen, J.

AU - Hautojärvi, P.

AU - Corbel, C.

AU - Ashwin, M. J.

AU - Newman, R. C.

PY - 1997/9/29

Y1 - 1997/9/29

N2 - Positron annihilation experiments have been performed to investigate the compensating defects in silicon δ-doping superlattices in (001) GaAs. The results reveal vacancies and ion-type defects, which are located between the delta planes in undoped GaAs. The vacancy defect is identified as the Ga vacancy and the negative ion is attributed to the Ga antisite. The concentrations of these defects increase strongly, when the areal concentrations of free carriers are reduced at the delta planes.

AB - Positron annihilation experiments have been performed to investigate the compensating defects in silicon δ-doping superlattices in (001) GaAs. The results reveal vacancies and ion-type defects, which are located between the delta planes in undoped GaAs. The vacancy defect is identified as the Ga vacancy and the negative ion is attributed to the Ga antisite. The concentrations of these defects increase strongly, when the areal concentrations of free carriers are reduced at the delta planes.

U2 - 10.1063/1.119417

DO - 10.1063/1.119417

M3 - Article

AN - SCOPUS:0012829965

SN - 0003-6951

VL - 71

SP - 1843

EP - 1845

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 13

ER -

Observation of Ga vacancies in silicon δ-doping superlattices in (001) GaAs

Abstract

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