Observation of the linear stark effect in a single acceptor in Si

L. E. Calvet; R. G. Wheeler; M. A. Reed

doi:10.1103/PhysRevLett.98.096805

Observation of the linear stark effect in a single acceptor in Si

L. E. Calvet
, R. G. Wheeler
, M. A. Reed

Université Paris-Saclay
Yale University

Research output: Contribution to journal › Article › peer-review

Abstract

The Stark splitting of a single fourfold degenerate impurity located within the built-in potential of a metal-semiconductor contact is investigated using low temperature transport measurements. A model is developed and used to analyze transport as a function of temperature, bias voltage, and magnetic field. Our data is consistent with a boron impurity. We report g factors of g1/2=1.14 and g3/2=1.72 and a linear Stark splitting 2Δ of 0.1 meV.

Original language	English
Article number	096805
Journal	Physical Review Letters
Volume	98
Issue number	9
DOIs	https://doi.org/10.1103/PhysRevLett.98.096805
Publication status	Published - 2 Mar 2007
Externally published	Yes

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10.1103/PhysRevLett.98.096805

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title = "Observation of the linear stark effect in a single acceptor in Si",

abstract = "The Stark splitting of a single fourfold degenerate impurity located within the built-in potential of a metal-semiconductor contact is investigated using low temperature transport measurements. A model is developed and used to analyze transport as a function of temperature, bias voltage, and magnetic field. Our data is consistent with a boron impurity. We report g factors of g1/2=1.14 and g3/2=1.72 and a linear Stark splitting 2Δ of 0.1 meV.",

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AU - Wheeler, R. G.

AU - Reed, M. A.

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N2 - The Stark splitting of a single fourfold degenerate impurity located within the built-in potential of a metal-semiconductor contact is investigated using low temperature transport measurements. A model is developed and used to analyze transport as a function of temperature, bias voltage, and magnetic field. Our data is consistent with a boron impurity. We report g factors of g1/2=1.14 and g3/2=1.72 and a linear Stark splitting 2Δ of 0.1 meV.

AB - The Stark splitting of a single fourfold degenerate impurity located within the built-in potential of a metal-semiconductor contact is investigated using low temperature transport measurements. A model is developed and used to analyze transport as a function of temperature, bias voltage, and magnetic field. Our data is consistent with a boron impurity. We report g factors of g1/2=1.14 and g3/2=1.72 and a linear Stark splitting 2Δ of 0.1 meV.

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DO - 10.1103/PhysRevLett.98.096805

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JF - Physical Review Letters

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Observation of the linear stark effect in a single acceptor in Si

Abstract

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