Observations of two separable photoquenching phenomena in lightly n-type bulk GaAs by optical absorption, Hall effect, and positron annihilation

S. Tüzemen; C. Le Berre; C. Corbel; M. R. Brozel; M. Yildirim

doi:10.1063/1.117252

Observations of two separable photoquenching phenomena in lightly n-type bulk GaAs by optical absorption, Hall effect, and positron annihilation

S. Tüzemen
, C. Le Berre
, C. Corbel
, M. R. Brozel
, M. Yildirim

Research output: Contribution to journal › Article › peer-review

Abstract

We show that two different types of photoquenching effect take place under low temperature illumination of lightly n-type bulk GaAs. Both phenomena result in an increase in positron trapping at vacancies. The first associated with a decrease in EL2 absorption, is produced with light of 1.1 μm wavelength and recovers near 100 K. While little photoquenching related to EL2 is observed after illumination close to the band edge (0.83 μm), persistent increases in Hall voltage and positron lifetime accompanied by a decrease in near band-edge absorption are observed. These latter phenomena recover at 50 K.

Original language	English
Pages (from-to)	3462-3464
Number of pages	3
Journal	Applied Physics Letters
Volume	69
Issue number	23
DOIs	https://doi.org/10.1063/1.117252
Publication status	Published - 2 Dec 1996
Externally published	Yes

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@article{c006699e86084d06a7388b080090bcae,

title = "Observations of two separable photoquenching phenomena in lightly n-type bulk GaAs by optical absorption, Hall effect, and positron annihilation",

abstract = "We show that two different types of photoquenching effect take place under low temperature illumination of lightly n-type bulk GaAs. Both phenomena result in an increase in positron trapping at vacancies. The first associated with a decrease in EL2 absorption, is produced with light of 1.1 μm wavelength and recovers near 100 K. While little photoquenching related to EL2 is observed after illumination close to the band edge (0.83 μm), persistent increases in Hall voltage and positron lifetime accompanied by a decrease in near band-edge absorption are observed. These latter phenomena recover at 50 K.",

author = "S. T{\"u}zemen and \{Le Berre\}, C. and C. Corbel and Brozel, \{M. R.\} and M. Yildirim",

year = "1996",

month = dec,

day = "2",

doi = "10.1063/1.117252",

language = "English",

volume = "69",

pages = "3462--3464",

journal = "Applied Physics Letters",

issn = "0003-6951",

number = "23",

}

TY - JOUR

T1 - Observations of two separable photoquenching phenomena in lightly n-type bulk GaAs by optical absorption, Hall effect, and positron annihilation

AU - Tüzemen, S.

AU - Le Berre, C.

AU - Corbel, C.

AU - Brozel, M. R.

AU - Yildirim, M.

PY - 1996/12/2

Y1 - 1996/12/2

N2 - We show that two different types of photoquenching effect take place under low temperature illumination of lightly n-type bulk GaAs. Both phenomena result in an increase in positron trapping at vacancies. The first associated with a decrease in EL2 absorption, is produced with light of 1.1 μm wavelength and recovers near 100 K. While little photoquenching related to EL2 is observed after illumination close to the band edge (0.83 μm), persistent increases in Hall voltage and positron lifetime accompanied by a decrease in near band-edge absorption are observed. These latter phenomena recover at 50 K.

AB - We show that two different types of photoquenching effect take place under low temperature illumination of lightly n-type bulk GaAs. Both phenomena result in an increase in positron trapping at vacancies. The first associated with a decrease in EL2 absorption, is produced with light of 1.1 μm wavelength and recovers near 100 K. While little photoquenching related to EL2 is observed after illumination close to the band edge (0.83 μm), persistent increases in Hall voltage and positron lifetime accompanied by a decrease in near band-edge absorption are observed. These latter phenomena recover at 50 K.

U2 - 10.1063/1.117252

DO - 10.1063/1.117252

M3 - Article

AN - SCOPUS:0030566563

SN - 0003-6951

VL - 69

SP - 3462

EP - 3464

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 23

ER -

Observations of two separable photoquenching phenomena in lightly n-type bulk GaAs by optical absorption, Hall effect, and positron annihilation

Abstract

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