Abstract
Electron beam induced current (EBIC) measurements, using the scanning electron microscope, have been performed on a Σ = 3 twin boundary with (1̄11) - (11̄2) steps in silicon. The two interface planes, together with the two different dislocations at their intersections, frequently show no detectable electrical activity. Such an activity however appears when the step density is high. In this case, transmission electron microscopy (TEM) shows that a large proportion of the step dislocations is decorated by nano-precipitates.
| Original language | English |
|---|---|
| Pages (from-to) | 581-586 |
| Number of pages | 6 |
| Journal | Journal de physique. Colloque |
| Volume | C1 |
| Issue number | 1 |
| Publication status | Published - 1 Jan 1990 |
| Event | Proceedings of the International Congress 1989: Intergranular and Interphase Boundaries in Materials - Paris, Fr Duration: 4 Sept 1989 → 8 Sept 1989 |