On the use of exchange biased top electrodes in magnetic tunnel junctions

D. Lacour, O. Durand, J. L. Maurice, H. Jaffrès, F. Nguyen Van Dau, F. Petroff, P. Etienne, J. Humbert, A. Vaurès

Research output: Contribution to journalArticlepeer-review

Abstract

We have investigated the magnetic behavior and the structural properties of ferromagnetic-antiferromagnetic systems (NiFe-IrMn and Co-IrMn) deposited directly on a thin tantalum buffer layer (bottom configuration) or above a thin Al2O3 tunnel barrier layer (top configuration). In the bottom configuration, the bilayer system exhibits higher magnetic performances than in the top configuration in terms of thermal stability. We have performed a detailed structural study by X-ray diffraction and high-resolution transmission electron microscopy which allow us to establish a clear correlation between the situation of the bilayer with respect to the tunnel barrier, its texture and its magnetic properties.

Original languageEnglish
Pages (from-to)403-406
Number of pages4
JournalJournal of Magnetism and Magnetic Materials
Volume270
Issue number3
DOIs
Publication statusPublished - 1 Apr 2004
Externally publishedYes

Keywords

  • Exchange bias
  • Magnetic tunnel junctions
  • Spin-dependent tunnelling

Fingerprint

Dive into the research topics of 'On the use of exchange biased top electrodes in magnetic tunnel junctions'. Together they form a unique fingerprint.

Cite this