TY - JOUR
T1 - Open-circuit voltage increase dynamics in high and low deposition rate polymorphous silicon solar cells
AU - Johnson, E. V.
AU - Dadouche, F.
AU - Gueunier-Farret, M. E.
AU - Kleider, J. P.
AU - Roca i Cabarrocas, P.
PY - 2010/3/1
Y1 - 2010/3/1
N2 - The dynamics of the open-circuit voltage (V OC) of polymorphous silicon (pm-Si:H) solar cells deposited at high and low rates (8 and 1.5 Å/s, HR and LR) and containing lightly or heavily doped p-layers (LD or HD) are compared through in situ, variable intensity measurements during light-soaking (LS). The V OC's of the LR cells show an increase with LS, regardless of doping level, whereas the HR cells show decreasing V OC's. This result is in contrast to the changes predicted by the dark diode characteristics, which predict increasing V OC for all the devices. The device measurements are compared to the analogous measurements on co-deposited coplanar p-i layer stacks to determine whether the V OC dynamics can be linked to changes in the p-layer doping efficiency during LS. The changes to the macroscopic electrical behaviour of the cell under varying light conditions are modelled using a simple, three parameter function, and are compared to results from a detailed, numerical modelling tool, AFORS-HET.
AB - The dynamics of the open-circuit voltage (V OC) of polymorphous silicon (pm-Si:H) solar cells deposited at high and low rates (8 and 1.5 Å/s, HR and LR) and containing lightly or heavily doped p-layers (LD or HD) are compared through in situ, variable intensity measurements during light-soaking (LS). The V OC's of the LR cells show an increase with LS, regardless of doping level, whereas the HR cells show decreasing V OC's. This result is in contrast to the changes predicted by the dark diode characteristics, which predict increasing V OC for all the devices. The device measurements are compared to the analogous measurements on co-deposited coplanar p-i layer stacks to determine whether the V OC dynamics can be linked to changes in the p-layer doping efficiency during LS. The changes to the macroscopic electrical behaviour of the cell under varying light conditions are modelled using a simple, three parameter function, and are compared to results from a detailed, numerical modelling tool, AFORS-HET.
U2 - 10.1002/pssa.200982723
DO - 10.1002/pssa.200982723
M3 - Article
AN - SCOPUS:77950987685
SN - 1862-6300
VL - 207
SP - 691
EP - 694
JO - Physica Status Solidi (A) Applications and Materials Science
JF - Physica Status Solidi (A) Applications and Materials Science
IS - 3
ER -