Optical absorption and thermal conductivity of GaAsPN absorbers grown on GaP in view of their use in multijunction solar cells

S. Ilahi; S. Almosni; F. Chouchane; M. Perrin; K. Zelazna; N. Yacoubi; R. Kudrawiec; P. Râle; L. Lombez; J. F. Guillemoles; O. Durand; C. Cornet

doi:10.1016/j.solmat.2015.06.003

Optical absorption and thermal conductivity of GaAsPN absorbers grown on GaP in view of their use in multijunction solar cells

S. Ilahi
, S. Almosni
, F. Chouchane
, M. Perrin
, K. Zelazna
, N. Yacoubi
, R. Kudrawiec
, P. Râle
, L. Lombez
, J. F. Guillemoles
, O. Durand
, C. Cornet

Laboratoire de Recherche de Caractérisation Photo-thermique
Université de Carthage
Centre national de la recherche scientifique
Faculty of Fundamental Problems of Technology
Wroclaw University of Technology
Institut Photovoltaïque d'Ile-de-France
Tokyo University

Research output: Contribution to journal › Article › peer-review

27 Citations (Scopus)

Abstract

The optical absorption and thermal conductivity of GaAsPN absorbers are investigated by means of optical absorption spectroscopy and photo-thermal deflection spectroscopy (PDS) for different 100 nm-thick GaAsNP/GaP samples under different growth conditions and various post-growth annealing temperatures. It is first shown that the As content strongly modifies the optical absorption spectrum of the GaAsPN: with a maximum absorption coefficient of 38,000 cm^-1 below the GaP bandgap energy. The optical absorption and thermal conductivities of the samples are then evaluated for various growth and annealing conditions using PDS: the results showing overall agreement with optical absorption spectroscopy measurements. A significant improvement in optical absorption and thermal conductivity after annealing is demonstrated. The best thermal conductivity measured is equal to 4 W/m K. These results are promising for the development of absorbers in multijunction solar-cell architecture.

Original language	English
Pages (from-to)	291-298
Number of pages	8
Journal	Solar Energy Materials and Solar Cells
Volume	141
DOIs	https://doi.org/10.1016/j.solmat.2015.06.003
Publication status	Published - 22 Jun 2015

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

Diluted-nitride alloy
GaAsPN absorbers
Multijunction solar cells
Photonics on silicon

Access to Document

10.1016/j.solmat.2015.06.003

Cite this

Ilahi, S., Almosni, S., Chouchane, F., Perrin, M., Zelazna, K., Yacoubi, N., Kudrawiec, R., Râle, P., Lombez, L., Guillemoles, J. F., Durand, O., & Cornet, C. (2015). Optical absorption and thermal conductivity of GaAsPN absorbers grown on GaP in view of their use in multijunction solar cells. Solar Energy Materials and Solar Cells, 141, 291-298. https://doi.org/10.1016/j.solmat.2015.06.003

@article{0b0b132fc7b34261986297fe173ab1af,

title = "Optical absorption and thermal conductivity of GaAsPN absorbers grown on GaP in view of their use in multijunction solar cells",

abstract = "The optical absorption and thermal conductivity of GaAsPN absorbers are investigated by means of optical absorption spectroscopy and photo-thermal deflection spectroscopy (PDS) for different 100 nm-thick GaAsNP/GaP samples under different growth conditions and various post-growth annealing temperatures. It is first shown that the As content strongly modifies the optical absorption spectrum of the GaAsPN: with a maximum absorption coefficient of 38,000 cm-1 below the GaP bandgap energy. The optical absorption and thermal conductivities of the samples are then evaluated for various growth and annealing conditions using PDS: the results showing overall agreement with optical absorption spectroscopy measurements. A significant improvement in optical absorption and thermal conductivity after annealing is demonstrated. The best thermal conductivity measured is equal to 4 W/m K. These results are promising for the development of absorbers in multijunction solar-cell architecture.",

keywords = "Diluted-nitride alloy, GaAsPN absorbers, Multijunction solar cells, Photonics on silicon",

author = "S. Ilahi and S. Almosni and F. Chouchane and M. Perrin and K. Zelazna and N. Yacoubi and R. Kudrawiec and P. R{\^a}le and L. Lombez and Guillemoles, \{J. F.\} and O. Durand and C. Cornet",

year = "2015",

month = jun,

day = "22",

doi = "10.1016/j.solmat.2015.06.003",

language = "English",

volume = "141",

pages = "291--298",

journal = "Solar Energy Materials and Solar Cells",

issn = "0927-0248",

publisher = "Elsevier B.V.",

}

Ilahi, S, Almosni, S, Chouchane, F, Perrin, M, Zelazna, K, Yacoubi, N, Kudrawiec, R, Râle, P, Lombez, L, Guillemoles, JF, Durand, O & Cornet, C 2015, 'Optical absorption and thermal conductivity of GaAsPN absorbers grown on GaP in view of their use in multijunction solar cells', Solar Energy Materials and Solar Cells, vol. 141, pp. 291-298. https://doi.org/10.1016/j.solmat.2015.06.003

TY - JOUR

T1 - Optical absorption and thermal conductivity of GaAsPN absorbers grown on GaP in view of their use in multijunction solar cells

AU - Ilahi, S.

AU - Almosni, S.

AU - Chouchane, F.

AU - Perrin, M.

AU - Zelazna, K.

AU - Yacoubi, N.

AU - Kudrawiec, R.

AU - Râle, P.

AU - Lombez, L.

AU - Guillemoles, J. F.

AU - Durand, O.

AU - Cornet, C.

PY - 2015/6/22

Y1 - 2015/6/22

N2 - The optical absorption and thermal conductivity of GaAsPN absorbers are investigated by means of optical absorption spectroscopy and photo-thermal deflection spectroscopy (PDS) for different 100 nm-thick GaAsNP/GaP samples under different growth conditions and various post-growth annealing temperatures. It is first shown that the As content strongly modifies the optical absorption spectrum of the GaAsPN: with a maximum absorption coefficient of 38,000 cm-1 below the GaP bandgap energy. The optical absorption and thermal conductivities of the samples are then evaluated for various growth and annealing conditions using PDS: the results showing overall agreement with optical absorption spectroscopy measurements. A significant improvement in optical absorption and thermal conductivity after annealing is demonstrated. The best thermal conductivity measured is equal to 4 W/m K. These results are promising for the development of absorbers in multijunction solar-cell architecture.

AB - The optical absorption and thermal conductivity of GaAsPN absorbers are investigated by means of optical absorption spectroscopy and photo-thermal deflection spectroscopy (PDS) for different 100 nm-thick GaAsNP/GaP samples under different growth conditions and various post-growth annealing temperatures. It is first shown that the As content strongly modifies the optical absorption spectrum of the GaAsPN: with a maximum absorption coefficient of 38,000 cm-1 below the GaP bandgap energy. The optical absorption and thermal conductivities of the samples are then evaluated for various growth and annealing conditions using PDS: the results showing overall agreement with optical absorption spectroscopy measurements. A significant improvement in optical absorption and thermal conductivity after annealing is demonstrated. The best thermal conductivity measured is equal to 4 W/m K. These results are promising for the development of absorbers in multijunction solar-cell architecture.

KW - Diluted-nitride alloy

KW - GaAsPN absorbers

KW - Multijunction solar cells

KW - Photonics on silicon

U2 - 10.1016/j.solmat.2015.06.003

DO - 10.1016/j.solmat.2015.06.003

M3 - Article

AN - SCOPUS:84934947706

SN - 0927-0248

VL - 141

SP - 291

EP - 298

JO - Solar Energy Materials and Solar Cells

JF - Solar Energy Materials and Solar Cells

ER -

Optical absorption and thermal conductivity of GaAsPN absorbers grown on GaP in view of their use in multijunction solar cells

Abstract

UN SDGs

Keywords

Access to Document

Fingerprint

Cite this