Optical analysis of the photon recycling effect in InGaAs/GaAsP multiple quantum well solar cell with light trapping structure

Kentaroh Watanabe; Tomoyuki Inoue; Kasidit Toprasertpong; Amaury Delamarre; Hassanet Sodabanlu; Jean Francois Guillemoles; Masakazu Sugiyama; Yoshiaki Nakano

doi:10.1109/PVSC.2016.7749818

Optical analysis of the photon recycling effect in InGaAs/GaAsP multiple quantum well solar cell with light trapping structure

Kentaroh Watanabe
, Tomoyuki Inoue
, Kasidit Toprasertpong
, Amaury Delamarre
, Hassanet Sodabanlu
, Jean Francois Guillemoles
, Masakazu Sugiyama
, Yoshiaki Nakano

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Optical evaluation of the GaAs single junction solar cell with InGaAs/GaAsP strain balanced multiple quantum wells (SB-MQWs) was attempted. In order to estimate the photon recycling (PR) effect for different effective optical path lengths in optically-thin MQWs, a quantitative analysis of electroluminescence (EL) was applied for the MQWs solar cells with and without light trapping texture on the rear surface. By external quantum efficiency measurement, a clear improvement in MQWs absorption was obtained by rear surface texturing of the semi-insulating GaAs substrate with epitaxially grown PV active layer. Upon EL measurement under carrier injection, the cell with light trapping texture showed increased EL photon emission, indicating the enhancement of V_OC. This is because the enhanced optical absorption by light trapping effect facilitated more vigorous photon recycling in the active region of the cell.

Original language	English
Title of host publication	2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1268-1272
Number of pages	5
ISBN (Electronic)	9781509027248
DOIs	https://doi.org/10.1109/PVSC.2016.7749818
Publication status	Published - 18 Nov 2016
Externally published	Yes
Event	43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 - Portland, United States Duration: 5 Jun 2016 → 10 Jun 2016

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
Volume	2016-November
ISSN (Print)	0160-8371

Conference

Conference	43rd IEEE Photovoltaic Specialists Conference, PVSC 2016
Country/Territory	United States
City	Portland
Period	5/06/16 → 10/06/16

Keywords

III-V nanostructure
light trapping effect
photon recycling
quantum well solar cells

Access to Document

10.1109/PVSC.2016.7749818

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Watanabe, K., Inoue, T., Toprasertpong, K., Delamarre, A., Sodabanlu, H., Guillemoles, J. F., Sugiyama, M., & Nakano, Y. (2016). Optical analysis of the photon recycling effect in InGaAs/GaAsP multiple quantum well solar cell with light trapping structure. In 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016 (pp. 1268-1272). Article 7749818 (Conference Record of the IEEE Photovoltaic Specialists Conference; Vol. 2016-November). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2016.7749818

Watanabe, Kentaroh ; Inoue, Tomoyuki ; Toprasertpong, Kasidit et al. / Optical analysis of the photon recycling effect in InGaAs/GaAsP multiple quantum well solar cell with light trapping structure. 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. Institute of Electrical and Electronics Engineers Inc., 2016. pp. 1268-1272 (Conference Record of the IEEE Photovoltaic Specialists Conference).

@inproceedings{fd3efe8121694801b7b76a4243ea5db5,

title = "Optical analysis of the photon recycling effect in InGaAs/GaAsP multiple quantum well solar cell with light trapping structure",

abstract = "Optical evaluation of the GaAs single junction solar cell with InGaAs/GaAsP strain balanced multiple quantum wells (SB-MQWs) was attempted. In order to estimate the photon recycling (PR) effect for different effective optical path lengths in optically-thin MQWs, a quantitative analysis of electroluminescence (EL) was applied for the MQWs solar cells with and without light trapping texture on the rear surface. By external quantum efficiency measurement, a clear improvement in MQWs absorption was obtained by rear surface texturing of the semi-insulating GaAs substrate with epitaxially grown PV active layer. Upon EL measurement under carrier injection, the cell with light trapping texture showed increased EL photon emission, indicating the enhancement of VOC. This is because the enhanced optical absorption by light trapping effect facilitated more vigorous photon recycling in the active region of the cell.",

keywords = "III-V nanostructure, light trapping effect, photon recycling, quantum well solar cells",

author = "Kentaroh Watanabe and Tomoyuki Inoue and Kasidit Toprasertpong and Amaury Delamarre and Hassanet Sodabanlu and Guillemoles, \{Jean Francois\} and Masakazu Sugiyama and Yoshiaki Nakano",

note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 ; Conference date: 05-06-2016 Through 10-06-2016",

year = "2016",

month = nov,

day = "18",

doi = "10.1109/PVSC.2016.7749818",

language = "English",

series = "Conference Record of the IEEE Photovoltaic Specialists Conference",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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}

Watanabe, K, Inoue, T, Toprasertpong, K, Delamarre, A, Sodabanlu, H, Guillemoles, JF, Sugiyama, M & Nakano, Y 2016, Optical analysis of the photon recycling effect in InGaAs/GaAsP multiple quantum well solar cell with light trapping structure. in 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016., 7749818, Conference Record of the IEEE Photovoltaic Specialists Conference, vol. 2016-November, Institute of Electrical and Electronics Engineers Inc., pp. 1268-1272, 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016, Portland, United States, 5/06/16. https://doi.org/10.1109/PVSC.2016.7749818

Optical analysis of the photon recycling effect in InGaAs/GaAsP multiple quantum well solar cell with light trapping structure. / Watanabe, Kentaroh; Inoue, Tomoyuki; Toprasertpong, Kasidit et al.
2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. Institute of Electrical and Electronics Engineers Inc., 2016. p. 1268-1272 7749818 (Conference Record of the IEEE Photovoltaic Specialists Conference; Vol. 2016-November).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Optical analysis of the photon recycling effect in InGaAs/GaAsP multiple quantum well solar cell with light trapping structure

AU - Watanabe, Kentaroh

AU - Inoue, Tomoyuki

AU - Toprasertpong, Kasidit

AU - Delamarre, Amaury

AU - Sodabanlu, Hassanet

AU - Guillemoles, Jean Francois

AU - Sugiyama, Masakazu

AU - Nakano, Yoshiaki

PY - 2016/11/18

Y1 - 2016/11/18

N2 - Optical evaluation of the GaAs single junction solar cell with InGaAs/GaAsP strain balanced multiple quantum wells (SB-MQWs) was attempted. In order to estimate the photon recycling (PR) effect for different effective optical path lengths in optically-thin MQWs, a quantitative analysis of electroluminescence (EL) was applied for the MQWs solar cells with and without light trapping texture on the rear surface. By external quantum efficiency measurement, a clear improvement in MQWs absorption was obtained by rear surface texturing of the semi-insulating GaAs substrate with epitaxially grown PV active layer. Upon EL measurement under carrier injection, the cell with light trapping texture showed increased EL photon emission, indicating the enhancement of VOC. This is because the enhanced optical absorption by light trapping effect facilitated more vigorous photon recycling in the active region of the cell.

AB - Optical evaluation of the GaAs single junction solar cell with InGaAs/GaAsP strain balanced multiple quantum wells (SB-MQWs) was attempted. In order to estimate the photon recycling (PR) effect for different effective optical path lengths in optically-thin MQWs, a quantitative analysis of electroluminescence (EL) was applied for the MQWs solar cells with and without light trapping texture on the rear surface. By external quantum efficiency measurement, a clear improvement in MQWs absorption was obtained by rear surface texturing of the semi-insulating GaAs substrate with epitaxially grown PV active layer. Upon EL measurement under carrier injection, the cell with light trapping texture showed increased EL photon emission, indicating the enhancement of VOC. This is because the enhanced optical absorption by light trapping effect facilitated more vigorous photon recycling in the active region of the cell.

KW - III-V nanostructure

KW - light trapping effect

KW - photon recycling

KW - quantum well solar cells

U2 - 10.1109/PVSC.2016.7749818

DO - 10.1109/PVSC.2016.7749818

M3 - Conference contribution

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T3 - Conference Record of the IEEE Photovoltaic Specialists Conference

SP - 1268

EP - 1272

BT - 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016

Y2 - 5 June 2016 through 10 June 2016

ER -

Watanabe K, Inoue T, Toprasertpong K, Delamarre A, Sodabanlu H, Guillemoles JF et al. Optical analysis of the photon recycling effect in InGaAs/GaAsP multiple quantum well solar cell with light trapping structure. In 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. Institute of Electrical and Electronics Engineers Inc. 2016. p. 1268-1272. 7749818. (Conference Record of the IEEE Photovoltaic Specialists Conference). doi: 10.1109/PVSC.2016.7749818

Optical analysis of the photon recycling effect in InGaAs/GaAsP multiple quantum well solar cell with light trapping structure

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Keywords

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