Optical and electrical diagnostics of fluorocarbon plasma etching processes

Jean Paul Booth

doi:10.1088/0963-0252/8/2/005

Optical and electrical diagnostics of fluorocarbon plasma etching processes

Jean Paul Booth

LTHE (UMR 5564 CNRS/IRD/Université de Grenoble)

Research output: Contribution to journal › Conference article › peer-review

Abstract

The role of CF and CF₂ radicals in etching and polymerization processes in capacitively-coupled radio-frequency plasmas in fluorocarbon gases used for the selective etching of SiO₂ layers is examined. Laser-induced fluorescence was used to determine the time-resolved axial concentration profiles of the species in continuous and pulse-modulated CF₄ and C₂F₆ plasmas. The mass distribution of the ions arriving at the reactor walls was determined using a quadrupole mass spectrometer.

Original language	English
Pages (from-to)	249-257
Number of pages	9
Journal	Plasma Sources Science and Technology
Volume	8
Issue number	2
DOIs	https://doi.org/10.1088/0963-0252/8/2/005
Publication status	Published - 1 Jan 1999
Externally published	Yes
Event	Proceedings of the 1998 14th Europhysics Conference on Atomic and Molecular Physics of Ionized Gases, ESCAMPIG-98 - Dublin, IRL Duration: 26 Aug 1998 → 29 Aug 1998

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10.1088/0963-0252/8/2/005

Cite this

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title = "Optical and electrical diagnostics of fluorocarbon plasma etching processes",

abstract = "The role of CF and CF2 radicals in etching and polymerization processes in capacitively-coupled radio-frequency plasmas in fluorocarbon gases used for the selective etching of SiO2 layers is examined. Laser-induced fluorescence was used to determine the time-resolved axial concentration profiles of the species in continuous and pulse-modulated CF4 and C2F6 plasmas. The mass distribution of the ions arriving at the reactor walls was determined using a quadrupole mass spectrometer.",

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doi = "10.1088/0963-0252/8/2/005",

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AU - Booth, Jean Paul

PY - 1999/1/1

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N2 - The role of CF and CF2 radicals in etching and polymerization processes in capacitively-coupled radio-frequency plasmas in fluorocarbon gases used for the selective etching of SiO2 layers is examined. Laser-induced fluorescence was used to determine the time-resolved axial concentration profiles of the species in continuous and pulse-modulated CF4 and C2F6 plasmas. The mass distribution of the ions arriving at the reactor walls was determined using a quadrupole mass spectrometer.

AB - The role of CF and CF2 radicals in etching and polymerization processes in capacitively-coupled radio-frequency plasmas in fluorocarbon gases used for the selective etching of SiO2 layers is examined. Laser-induced fluorescence was used to determine the time-resolved axial concentration profiles of the species in continuous and pulse-modulated CF4 and C2F6 plasmas. The mass distribution of the ions arriving at the reactor walls was determined using a quadrupole mass spectrometer.

U2 - 10.1088/0963-0252/8/2/005

DO - 10.1088/0963-0252/8/2/005

M3 - Conference article

AN - SCOPUS:0032640226

SN - 0963-0252

VL - 8

SP - 249

EP - 257

JO - Plasma Sources Science and Technology

JF - Plasma Sources Science and Technology

IS - 2

T2 - Proceedings of the 1998 14th Europhysics Conference on Atomic and Molecular Physics of Ionized Gases, ESCAMPIG-98

Y2 - 26 August 1998 through 29 August 1998

ER -

Optical and electrical diagnostics of fluorocarbon plasma etching processes

Abstract

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