Optical nonlinear effects in GaAs/GaAlAs Bragg reflectors

G. Le Saux; J. P. Pocholle; F. Bretenaker; L. Zibell; E. Barbier; F. Salin; M. Papuchon; A. Brun

doi:10.1063/1.345402

Optical nonlinear effects in GaAs/GaAlAs Bragg reflectors

G. Le Saux, J. P. Pocholle, F. Bretenaker, L. Zibell, E. Barbier, F. Salin, M. Papuchon, A. Brun

Thales Group

Research output: Contribution to journal › Article › peer-review

Abstract

Band filling effects are used to modify the absorption and refractive index of bulk GaAs/Ga_1-xAl_xAs layers in a Bragg reflector in the wavelength region between the band gap of the two materials. Significant reflectivity modifications are observed in a subpicosecond regime.

Original language	English
Pages (from-to)	3190-3191
Number of pages	2
Journal	Journal of Applied Physics
Volume	67
Issue number	6
DOIs	https://doi.org/10.1063/1.345402
Publication status	Published - 1 Dec 1990
Externally published	Yes

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@article{a31dbf8baed54b46bfd0a9cc884d0ea3,

title = "Optical nonlinear effects in GaAs/GaAlAs Bragg reflectors",

abstract = "Band filling effects are used to modify the absorption and refractive index of bulk GaAs/Ga1-xAlxAs layers in a Bragg reflector in the wavelength region between the band gap of the two materials. Significant reflectivity modifications are observed in a subpicosecond regime.",

author = "\{Le Saux\}, G. and Pocholle, \{J. P.\} and F. Bretenaker and L. Zibell and E. Barbier and F. Salin and M. Papuchon and A. Brun",

year = "1990",

month = dec,

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doi = "10.1063/1.345402",

language = "English",

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journal = "Journal of Applied Physics",

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TY - JOUR

T1 - Optical nonlinear effects in GaAs/GaAlAs Bragg reflectors

AU - Le Saux, G.

AU - Pocholle, J. P.

AU - Bretenaker, F.

AU - Zibell, L.

AU - Barbier, E.

AU - Salin, F.

AU - Papuchon, M.

AU - Brun, A.

PY - 1990/12/1

Y1 - 1990/12/1

N2 - Band filling effects are used to modify the absorption and refractive index of bulk GaAs/Ga1-xAlxAs layers in a Bragg reflector in the wavelength region between the band gap of the two materials. Significant reflectivity modifications are observed in a subpicosecond regime.

AB - Band filling effects are used to modify the absorption and refractive index of bulk GaAs/Ga1-xAlxAs layers in a Bragg reflector in the wavelength region between the band gap of the two materials. Significant reflectivity modifications are observed in a subpicosecond regime.

U2 - 10.1063/1.345402

DO - 10.1063/1.345402

M3 - Article

AN - SCOPUS:36549104321

SN - 0021-8979

VL - 67

SP - 3190

EP - 3191

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 6

ER -

Optical nonlinear effects in GaAs/GaAlAs Bragg reflectors

Abstract

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