Optical properties and structural characteristics of semiconductor-doped oxide gels

  • Thierry Gacoin
  • , Cyrille Train
  • , Frederic Chaput
  • , Jean Pierre Boilot
  • , Pascal Aubert
  • , M. Gandais
  • , Yangshu Wang
  • , Andre Lecomte

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

CdS and PbS semiconductor nanoclusters (2 - 10 nm) are produced by using direct precipitation, γ-radiolysis and reversed micelles. A chemical capping reaction is made at the cluster surface by thiolate complexes. The structure and the size of the capped clusters are determined by Optical Absorption, X-ray Diffraction, Small Angle X-ray Scattering and High Resolution Electron Microscopy. After grafting of a gel precursor at the cluster surface, PbS and CdS particles can be incorporated in optically clear and dense oxide gels prepared by hydrolysis of metal alkoxides in a wet atmosphere.

Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
PublisherPubl by Int Soc for Optical Engineering
Pages565-576
Number of pages12
ISBN (Print)0819409316, 9780819409317
DOIs
Publication statusPublished - 1 Jan 1992
EventSol-Gel Optics II - San Diego, CA, USA
Duration: 20 Jul 199222 Jul 1992

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume1758
ISSN (Print)0277-786X

Conference

ConferenceSol-Gel Optics II
CitySan Diego, CA, USA
Period20/07/9222/07/92

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