Optical transitions and band gap discontinuities of GaInAsSb/AlGaAsSb quantum wells emitting in the 3 μm range determined by modulation spectroscopy

M. Motyka; G. Sk; K. Ryczko; J. Misiewicz; S. Belahsene; G. Boissier; Y. Rouillard

doi:10.1063/1.3226657

Optical transitions and band gap discontinuities of GaInAsSb/AlGaAsSb quantum wells emitting in the 3 μm range determined by modulation spectroscopy

M. Motyka
, G. Sk
, K. Ryczko
, J. Misiewicz
, S. Belahsene
, G. Boissier
, Y. Rouillard

Research output: Contribution to journal › Article › peer-review

Abstract

Modulation spectroscopy, in a form of photoreflectance (PR), has been used to study the electronic structure properties of Ga0.55 In0.45 Asx Sb1-x / Al0.30 Ga0.70 Asy Sb1-y quantum wells (QWs) designed for the 3 μm emission range at room temperature. A number of spectral features related to QW transitions have been revealed. With the support of energy level calculations they could be identified unambiguously for the unstrained (chemical) conduction band offset of 85%, almost independent of a small As/Sb content change in both the well and the barrier. This has been recalculated into the band discontinuities of the realistic (strained) structure, which have been found to be in a good agreement with the values obtained based on the first principles method.

Original language	English
Article number	066104
Journal	Journal of Applied Physics
Volume	106
Issue number	6
DOIs	https://doi.org/10.1063/1.3226657
Publication status	Published - 9 Oct 2009
Externally published	Yes

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title = "Optical transitions and band gap discontinuities of GaInAsSb/AlGaAsSb quantum wells emitting in the 3 μm range determined by modulation spectroscopy",

abstract = "Modulation spectroscopy, in a form of photoreflectance (PR), has been used to study the electronic structure properties of Ga0.55 In0.45 Asx Sb1-x / Al0.30 Ga0.70 Asy Sb1-y quantum wells (QWs) designed for the 3 μm emission range at room temperature. A number of spectral features related to QW transitions have been revealed. With the support of energy level calculations they could be identified unambiguously for the unstrained (chemical) conduction band offset of 85\%, almost independent of a small As/Sb content change in both the well and the barrier. This has been recalculated into the band discontinuities of the realistic (strained) structure, which have been found to be in a good agreement with the values obtained based on the first principles method.",

author = "M. Motyka and G. Sk and K. Ryczko and J. Misiewicz and S. Belahsene and G. Boissier and Y. Rouillard",

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T1 - Optical transitions and band gap discontinuities of GaInAsSb/AlGaAsSb quantum wells emitting in the 3 μm range determined by modulation spectroscopy

AU - Motyka, M.

AU - Sk, G.

AU - Ryczko, K.

AU - Misiewicz, J.

AU - Belahsene, S.

AU - Boissier, G.

AU - Rouillard, Y.

PY - 2009/10/9

Y1 - 2009/10/9

N2 - Modulation spectroscopy, in a form of photoreflectance (PR), has been used to study the electronic structure properties of Ga0.55 In0.45 Asx Sb1-x / Al0.30 Ga0.70 Asy Sb1-y quantum wells (QWs) designed for the 3 μm emission range at room temperature. A number of spectral features related to QW transitions have been revealed. With the support of energy level calculations they could be identified unambiguously for the unstrained (chemical) conduction band offset of 85%, almost independent of a small As/Sb content change in both the well and the barrier. This has been recalculated into the band discontinuities of the realistic (strained) structure, which have been found to be in a good agreement with the values obtained based on the first principles method.

AB - Modulation spectroscopy, in a form of photoreflectance (PR), has been used to study the electronic structure properties of Ga0.55 In0.45 Asx Sb1-x / Al0.30 Ga0.70 Asy Sb1-y quantum wells (QWs) designed for the 3 μm emission range at room temperature. A number of spectral features related to QW transitions have been revealed. With the support of energy level calculations they could be identified unambiguously for the unstrained (chemical) conduction band offset of 85%, almost independent of a small As/Sb content change in both the well and the barrier. This has been recalculated into the band discontinuities of the realistic (strained) structure, which have been found to be in a good agreement with the values obtained based on the first principles method.

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DO - 10.1063/1.3226657

M3 - Article

AN - SCOPUS:70349640174

SN - 0021-8979

VL - 106

JO - Journal of Applied Physics

JF - Journal of Applied Physics

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M1 - 066104

ER -

Optical transitions and band gap discontinuities of GaInAsSb/AlGaAsSb quantum wells emitting in the 3 μm range determined by modulation spectroscopy

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