Optically induced ultrafast quenching of the semiconductor quantum well luminescence

A. Amo; D. Ballarini; D. Sanvitto; E. Kozhemyakina; L. Viña; A. Lemaître; D. Bajoni; J. Bloch

doi:10.1063/1.2857494

Optically induced ultrafast quenching of the semiconductor quantum well luminescence

A. Amo
, D. Ballarini
, D. Sanvitto
, E. Kozhemyakina
, L. Viña
, A. Lemaître
, D. Bajoni
, J. Bloch

Research output: Contribution to journal › Article › peer-review

Abstract

We present an experimental configuration that enables the ultrafast, transient quenching of the excitonic photoluminescence in quantum wells. Our scheme is based on two, delayed, short pulses experiment. A first pulse excites carriers in the system, while a second pulse induces an ultrafast redistribution of excitons that results in abrupt dips in the photoluminescence. We present a model that quantitatively accounts for the measured dip depth. The magnitude of the dip, determined by the temperature change of the carriers, can be controlled by varying the power and delay of the second pulse.

Original language	English
Article number	061912
Journal	Applied Physics Letters
Volume	92
Issue number	6
DOIs	https://doi.org/10.1063/1.2857494
Publication status	Published - 22 Feb 2008
Externally published	Yes

Access to Document

10.1063/1.2857494

Cite this

@article{2efba5828ab446cca37b71ec654e2b8a,

title = "Optically induced ultrafast quenching of the semiconductor quantum well luminescence",

abstract = "We present an experimental configuration that enables the ultrafast, transient quenching of the excitonic photoluminescence in quantum wells. Our scheme is based on two, delayed, short pulses experiment. A first pulse excites carriers in the system, while a second pulse induces an ultrafast redistribution of excitons that results in abrupt dips in the photoluminescence. We present a model that quantitatively accounts for the measured dip depth. The magnitude of the dip, determined by the temperature change of the carriers, can be controlled by varying the power and delay of the second pulse.",

author = "A. Amo and D. Ballarini and D. Sanvitto and E. Kozhemyakina and L. Vi{\~n}a and A. Lema{\^i}tre and D. Bajoni and J. Bloch",

year = "2008",

month = feb,

day = "22",

doi = "10.1063/1.2857494",

language = "English",

volume = "92",

journal = "Applied Physics Letters",

issn = "0003-6951",

number = "6",

}

TY - JOUR

T1 - Optically induced ultrafast quenching of the semiconductor quantum well luminescence

AU - Amo, A.

AU - Ballarini, D.

AU - Sanvitto, D.

AU - Kozhemyakina, E.

AU - Viña, L.

AU - Lemaître, A.

AU - Bajoni, D.

AU - Bloch, J.

PY - 2008/2/22

Y1 - 2008/2/22

N2 - We present an experimental configuration that enables the ultrafast, transient quenching of the excitonic photoluminescence in quantum wells. Our scheme is based on two, delayed, short pulses experiment. A first pulse excites carriers in the system, while a second pulse induces an ultrafast redistribution of excitons that results in abrupt dips in the photoluminescence. We present a model that quantitatively accounts for the measured dip depth. The magnitude of the dip, determined by the temperature change of the carriers, can be controlled by varying the power and delay of the second pulse.

AB - We present an experimental configuration that enables the ultrafast, transient quenching of the excitonic photoluminescence in quantum wells. Our scheme is based on two, delayed, short pulses experiment. A first pulse excites carriers in the system, while a second pulse induces an ultrafast redistribution of excitons that results in abrupt dips in the photoluminescence. We present a model that quantitatively accounts for the measured dip depth. The magnitude of the dip, determined by the temperature change of the carriers, can be controlled by varying the power and delay of the second pulse.

UR - https://www.scopus.com/pages/publications/39349101039

U2 - 10.1063/1.2857494

DO - 10.1063/1.2857494

M3 - Article

AN - SCOPUS:39349101039

SN - 0003-6951

VL - 92

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 6

M1 - 061912

ER -

Optically induced ultrafast quenching of the semiconductor quantum well luminescence

Abstract

Access to Document

Other files and links

Fingerprint

Cite this