Optimization and characterization of InGaAsN/GaAs quantum-well ridge laser diodes for high frequency operation

S. Bonnefont; B. Messant; M. Boutillier; O. Gauthier-Lafaye; F. Lozes-Dupuy; A. Martinez; V. Sallet; K. Merghem; L. Ferlazzo; J. C. Harmand; A. Ramdane; J. G. Provost; B. Dagens; J. Landreau; O. Le Gouezigou; X. Marie

doi:10.1007/s11082-006-0032-7

Optimization and characterization of InGaAsN/GaAs quantum-well ridge laser diodes for high frequency operation

S. Bonnefont, B. Messant, M. Boutillier, O. Gauthier-Lafaye, F. Lozes-Dupuy, A. Martinez, V. Sallet, K. Merghem, L. Ferlazzo, J. C. Harmand, A. Ramdane, J. G. Provost, B. Dagens, J. Landreau, O. Le Gouezigou, X. Marie

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Abstract

Optimization and characterization of multiple InGaAsN/GaAs quantum-well laser diodes for high frequency operation are reported. From the modelling of the dilute nitride quantum well, we investigate how to design the structure to achieve a high frequency operation. The gain characteristics are optimized by incorporating the minimum amount of nitrogen in the well to obtain the emission at 1.3 μm with a low transparency density and a high differential gain. We show that the number of wells must be adjusted to three to benefit of the best compromise between the threshold current and the differential gain. The effects of the cavity losses on the dynamic characteristics are evaluated and demonstrate the interest for high cavity losses to reach high relaxation frequency despite a lower characteristic temperature. An optimized structure has been realized and exhibits an emission at 1.34μm with a transparency current density of 642 A/cm² and a characteristic temperature T₀ ∼ 80 K. Dynamic properties for ridge devices are evaluated from relative intensity noise measurements and small-signal modulation. A relaxation frequency as high as 7.4 GHz and a 9.7 GHz small-signal bandwidth are reported. We demonstrate transmission up to 10 Gb/s at 25°C without penalty and bit error floor.

Original language	English
Pages (from-to)	313-324
Number of pages	12
Journal	Optical and Quantum Electronics
Volume	38
Issue number	4-6
DOIs	https://doi.org/10.1007/s11082-006-0032-7
Publication status	Published - 1 Mar 2006
Externally published	Yes

Keywords

1.3 μm laser emission
Dilute nitride InGaAsN
Optical communications
Semiconductor laser

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10.1007/s11082-006-0032-7

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Bonnefont, S., Messant, B., Boutillier, M., Gauthier-Lafaye, O., Lozes-Dupuy, F., Martinez, A., Sallet, V., Merghem, K., Ferlazzo, L., Harmand, J. C., Ramdane, A., Provost, J. G., Dagens, B., Landreau, J., Le Gouezigou, O., & Marie, X. (2006). Optimization and characterization of InGaAsN/GaAs quantum-well ridge laser diodes for high frequency operation. Optical and Quantum Electronics, 38(4-6), 313-324. https://doi.org/10.1007/s11082-006-0032-7

@article{5c37e84198d34bd0af30e7959b7945f0,

title = "Optimization and characterization of InGaAsN/GaAs quantum-well ridge laser diodes for high frequency operation",

abstract = "Optimization and characterization of multiple InGaAsN/GaAs quantum-well laser diodes for high frequency operation are reported. From the modelling of the dilute nitride quantum well, we investigate how to design the structure to achieve a high frequency operation. The gain characteristics are optimized by incorporating the minimum amount of nitrogen in the well to obtain the emission at 1.3 μm with a low transparency density and a high differential gain. We show that the number of wells must be adjusted to three to benefit of the best compromise between the threshold current and the differential gain. The effects of the cavity losses on the dynamic characteristics are evaluated and demonstrate the interest for high cavity losses to reach high relaxation frequency despite a lower characteristic temperature. An optimized structure has been realized and exhibits an emission at 1.34μm with a transparency current density of 642 A/cm2 and a characteristic temperature T0 ∼ 80 K. Dynamic properties for ridge devices are evaluated from relative intensity noise measurements and small-signal modulation. A relaxation frequency as high as 7.4 GHz and a 9.7 GHz small-signal bandwidth are reported. We demonstrate transmission up to 10 Gb/s at 25°C without penalty and bit error floor.",

keywords = "1.3 μm laser emission, Dilute nitride InGaAsN, Optical communications, Semiconductor laser",

author = "S. Bonnefont and B. Messant and M. Boutillier and O. Gauthier-Lafaye and F. Lozes-Dupuy and A. Martinez and V. Sallet and K. Merghem and L. Ferlazzo and Harmand, \{J. C.\} and A. Ramdane and Provost, \{J. G.\} and B. Dagens and J. Landreau and \{Le Gouezigou\}, O. and X. Marie",

year = "2006",

month = mar,

day = "1",

doi = "10.1007/s11082-006-0032-7",

language = "English",

volume = "38",

pages = "313--324",

journal = "Optical and Quantum Electronics",

issn = "0306-8919",

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Bonnefont, S, Messant, B, Boutillier, M, Gauthier-Lafaye, O, Lozes-Dupuy, F, Martinez, A, Sallet, V, Merghem, K, Ferlazzo, L, Harmand, JC, Ramdane, A, Provost, JG, Dagens, B, Landreau, J, Le Gouezigou, O & Marie, X 2006, 'Optimization and characterization of InGaAsN/GaAs quantum-well ridge laser diodes for high frequency operation', Optical and Quantum Electronics, vol. 38, no. 4-6, pp. 313-324. https://doi.org/10.1007/s11082-006-0032-7

TY - JOUR

T1 - Optimization and characterization of InGaAsN/GaAs quantum-well ridge laser diodes for high frequency operation

AU - Bonnefont, S.

AU - Messant, B.

AU - Boutillier, M.

AU - Gauthier-Lafaye, O.

AU - Lozes-Dupuy, F.

AU - Martinez, A.

AU - Sallet, V.

AU - Merghem, K.

AU - Ferlazzo, L.

AU - Harmand, J. C.

AU - Ramdane, A.

AU - Provost, J. G.

AU - Dagens, B.

AU - Landreau, J.

AU - Le Gouezigou, O.

AU - Marie, X.

PY - 2006/3/1

Y1 - 2006/3/1

N2 - Optimization and characterization of multiple InGaAsN/GaAs quantum-well laser diodes for high frequency operation are reported. From the modelling of the dilute nitride quantum well, we investigate how to design the structure to achieve a high frequency operation. The gain characteristics are optimized by incorporating the minimum amount of nitrogen in the well to obtain the emission at 1.3 μm with a low transparency density and a high differential gain. We show that the number of wells must be adjusted to three to benefit of the best compromise between the threshold current and the differential gain. The effects of the cavity losses on the dynamic characteristics are evaluated and demonstrate the interest for high cavity losses to reach high relaxation frequency despite a lower characteristic temperature. An optimized structure has been realized and exhibits an emission at 1.34μm with a transparency current density of 642 A/cm2 and a characteristic temperature T0 ∼ 80 K. Dynamic properties for ridge devices are evaluated from relative intensity noise measurements and small-signal modulation. A relaxation frequency as high as 7.4 GHz and a 9.7 GHz small-signal bandwidth are reported. We demonstrate transmission up to 10 Gb/s at 25°C without penalty and bit error floor.

AB - Optimization and characterization of multiple InGaAsN/GaAs quantum-well laser diodes for high frequency operation are reported. From the modelling of the dilute nitride quantum well, we investigate how to design the structure to achieve a high frequency operation. The gain characteristics are optimized by incorporating the minimum amount of nitrogen in the well to obtain the emission at 1.3 μm with a low transparency density and a high differential gain. We show that the number of wells must be adjusted to three to benefit of the best compromise between the threshold current and the differential gain. The effects of the cavity losses on the dynamic characteristics are evaluated and demonstrate the interest for high cavity losses to reach high relaxation frequency despite a lower characteristic temperature. An optimized structure has been realized and exhibits an emission at 1.34μm with a transparency current density of 642 A/cm2 and a characteristic temperature T0 ∼ 80 K. Dynamic properties for ridge devices are evaluated from relative intensity noise measurements and small-signal modulation. A relaxation frequency as high as 7.4 GHz and a 9.7 GHz small-signal bandwidth are reported. We demonstrate transmission up to 10 Gb/s at 25°C without penalty and bit error floor.

KW - 1.3 μm laser emission

KW - Dilute nitride InGaAsN

KW - Optical communications

KW - Semiconductor laser

U2 - 10.1007/s11082-006-0032-7

DO - 10.1007/s11082-006-0032-7

M3 - Article

AN - SCOPUS:33646592210

SN - 0306-8919

VL - 38

SP - 313

EP - 324

JO - Optical and Quantum Electronics

JF - Optical and Quantum Electronics

IS - 4-6

ER -

Optimization and characterization of InGaAsN/GaAs quantum-well ridge laser diodes for high frequency operation

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