Optimization of electroluminescent diodes based on pm-SiC:H deposited at low temperature

I. Stenger; Th Nguyen-Tran; A. Abramov; C. Barthou; P. Roca i Cabarrocas

doi:10.1016/j.mseb.2007.08.003

Optimization of electroluminescent diodes based on pm-SiC:H deposited at low temperature

I. Stenger
, Th Nguyen-Tran
, A. Abramov
, C. Barthou
, P. Roca i Cabarrocas

Institut polytechnique de Paris
CNRS, UMR 7588, INSP

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

Polymorphous silicon carbon (pm-SiC:H) thin films have been prepared from the decomposition of SiH₄-CH₄-H₂ mixtures at low temperature (200 °C) by plasma-enhanced chemical vapour deposition (PECVD). The optical and microstructural properties of the films were studied by spectroscopic ellipsometry and Raman spectroscopy. The SiH₄/CH₄ flow rate ratio is demonstrated as a key deposition parameter for optimizing the electroluminescence of PIN diodes incorporating this material for the intrinsic (I) layer. Diodes with rectification ratios above 10⁶ were realized by using the optimized materials. Electroluminescence spectra, centred at 1.4 eV, were obtained by applying a DC voltage lower than 4 V, which make these devices interesting for optoelectronic applications.

Original language	English
Pages (from-to)	245-248
Number of pages	4
Journal	Materials Science and Engineering: B
Volume	147
Issue number	2-3
DOIs	https://doi.org/10.1016/j.mseb.2007.08.003
Publication status	Published - 15 Feb 2008

Keywords

Electroluminescent diode
Polymorphous SiC
Silicon nanocrystal
nc-Si electroluminescence

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10.1016/j.mseb.2007.08.003

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title = "Optimization of electroluminescent diodes based on pm-SiC:H deposited at low temperature",

abstract = "Polymorphous silicon carbon (pm-SiC:H) thin films have been prepared from the decomposition of SiH4-CH4-H2 mixtures at low temperature (200 °C) by plasma-enhanced chemical vapour deposition (PECVD). The optical and microstructural properties of the films were studied by spectroscopic ellipsometry and Raman spectroscopy. The SiH4/CH4 flow rate ratio is demonstrated as a key deposition parameter for optimizing the electroluminescence of PIN diodes incorporating this material for the intrinsic (I) layer. Diodes with rectification ratios above 106 were realized by using the optimized materials. Electroluminescence spectra, centred at 1.4 eV, were obtained by applying a DC voltage lower than 4 V, which make these devices interesting for optoelectronic applications.",

keywords = "Electroluminescent diode, Polymorphous SiC, Silicon nanocrystal, nc-Si electroluminescence",

author = "I. Stenger and Th Nguyen-Tran and A. Abramov and C. Barthou and \{Roca i Cabarrocas\}, P.",

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T1 - Optimization of electroluminescent diodes based on pm-SiC:H deposited at low temperature

AU - Stenger, I.

AU - Nguyen-Tran, Th

AU - Abramov, A.

AU - Barthou, C.

AU - Roca i Cabarrocas, P.

PY - 2008/2/15

Y1 - 2008/2/15

N2 - Polymorphous silicon carbon (pm-SiC:H) thin films have been prepared from the decomposition of SiH4-CH4-H2 mixtures at low temperature (200 °C) by plasma-enhanced chemical vapour deposition (PECVD). The optical and microstructural properties of the films were studied by spectroscopic ellipsometry and Raman spectroscopy. The SiH4/CH4 flow rate ratio is demonstrated as a key deposition parameter for optimizing the electroluminescence of PIN diodes incorporating this material for the intrinsic (I) layer. Diodes with rectification ratios above 106 were realized by using the optimized materials. Electroluminescence spectra, centred at 1.4 eV, were obtained by applying a DC voltage lower than 4 V, which make these devices interesting for optoelectronic applications.

AB - Polymorphous silicon carbon (pm-SiC:H) thin films have been prepared from the decomposition of SiH4-CH4-H2 mixtures at low temperature (200 °C) by plasma-enhanced chemical vapour deposition (PECVD). The optical and microstructural properties of the films were studied by spectroscopic ellipsometry and Raman spectroscopy. The SiH4/CH4 flow rate ratio is demonstrated as a key deposition parameter for optimizing the electroluminescence of PIN diodes incorporating this material for the intrinsic (I) layer. Diodes with rectification ratios above 106 were realized by using the optimized materials. Electroluminescence spectra, centred at 1.4 eV, were obtained by applying a DC voltage lower than 4 V, which make these devices interesting for optoelectronic applications.

KW - Electroluminescent diode

KW - Polymorphous SiC

KW - Silicon nanocrystal

KW - nc-Si electroluminescence

U2 - 10.1016/j.mseb.2007.08.003

DO - 10.1016/j.mseb.2007.08.003

M3 - Article

AN - SCOPUS:38749097788

SN - 0921-5107

VL - 147

SP - 245

EP - 248

JO - Materials Science and Engineering: B

JF - Materials Science and Engineering: B

IS - 2-3

ER -

Optimization of electroluminescent diodes based on pm-SiC:H deposited at low temperature

Abstract

Keywords

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