Abstract
We investigate optical properties of quantum wells grown by migration enhanced epitaxy (MEE) at high temperature (580°C). Our results suggest that Ga droplets that form during the MEE cycle strongly degrade the interface quality. Quantum wells grown by MEE avoiding the formation of Ga droplets exhibit very good optical properties.
| Original language | English |
|---|---|
| Pages (from-to) | 774-776 |
| Number of pages | 3 |
| Journal | Journal of Crystal Growth |
| Volume | 127 |
| Issue number | 1-4 |
| DOIs | |
| Publication status | Published - 2 Feb 1993 |
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