Optimizing phosphorous and boron doped layers for stable p-i-n solar cells

Y. Poissant; P. Roca I Cabarrocas

doi:10.1016/s0022-3093(99)00917-5

Optimizing phosphorous and boron doped layers for stable p-i-n solar cells

Y. Poissant, P. Roca I Cabarrocas

Institut polytechnique de Paris

Research output: Contribution to journal › Conference article › peer-review

Abstract

Phosphorous and boron doped a-Si:H layers have been optimized with respect to their stability when used in single junction p-i-n solar cells. Hydrogen effusion measurements show a structural change for both types of films at doping concentrations above 0.2 ± 0.1%. While at this doping level the conductivity of the layers is not the largest possible, their application to solar cells results in an increase of the open circuit voltage, ascribed to the activation of boron atoms and a better stability of the n-layer.

Original language	English
Pages (from-to)	1134-1139
Number of pages	6
Journal	Journal of Non-Crystalline Solids
Volume	266-269 B
DOIs	https://doi.org/10.1016/s0022-3093(99)00917-5
Publication status	Published - 1 May 2000
Event	18th International Conference on Amorphous and Microcrystalline Semiconductors - Sicence and Technology (ICAMS 18) - Snowbird, UT, United States Duration: 23 Aug 1999 → 27 Aug 1999

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10.1016/s0022-3093(99)00917-5

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title = "Optimizing phosphorous and boron doped layers for stable p-i-n solar cells",

abstract = "Phosphorous and boron doped a-Si:H layers have been optimized with respect to their stability when used in single junction p-i-n solar cells. Hydrogen effusion measurements show a structural change for both types of films at doping concentrations above 0.2 ± 0.1\%. While at this doping level the conductivity of the layers is not the largest possible, their application to solar cells results in an increase of the open circuit voltage, ascribed to the activation of boron atoms and a better stability of the n-layer.",

author = "Y. Poissant and \{Roca I Cabarrocas\}, P.",

year = "2000",

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doi = "10.1016/s0022-3093(99)00917-5",

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journal = "Journal of Non-Crystalline Solids",

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note = "18th International Conference on Amorphous and Microcrystalline Semiconductors - Sicence and Technology (ICAMS 18) ; Conference date: 23-08-1999 Through 27-08-1999",

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T1 - Optimizing phosphorous and boron doped layers for stable p-i-n solar cells

AU - Poissant, Y.

AU - Roca I Cabarrocas, P.

PY - 2000/5/1

Y1 - 2000/5/1

N2 - Phosphorous and boron doped a-Si:H layers have been optimized with respect to their stability when used in single junction p-i-n solar cells. Hydrogen effusion measurements show a structural change for both types of films at doping concentrations above 0.2 ± 0.1%. While at this doping level the conductivity of the layers is not the largest possible, their application to solar cells results in an increase of the open circuit voltage, ascribed to the activation of boron atoms and a better stability of the n-layer.

AB - Phosphorous and boron doped a-Si:H layers have been optimized with respect to their stability when used in single junction p-i-n solar cells. Hydrogen effusion measurements show a structural change for both types of films at doping concentrations above 0.2 ± 0.1%. While at this doping level the conductivity of the layers is not the largest possible, their application to solar cells results in an increase of the open circuit voltage, ascribed to the activation of boron atoms and a better stability of the n-layer.

U2 - 10.1016/s0022-3093(99)00917-5

DO - 10.1016/s0022-3093(99)00917-5

M3 - Conference article

AN - SCOPUS:0006356808

SN - 0022-3093

VL - 266-269 B

SP - 1134

EP - 1139

JO - Journal of Non-Crystalline Solids

JF - Journal of Non-Crystalline Solids

T2 - 18th International Conference on Amorphous and Microcrystalline Semiconductors - Sicence and Technology (ICAMS 18)

Y2 - 23 August 1999 through 27 August 1999

ER -

Optimizing phosphorous and boron doped layers for stable p-i-n solar cells

Abstract

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