Optimum doping level in a-Si:H and a-SiC:H materials

A. Hadjadj; P. St'ahel; P. Roca I Cabarrocas; V. Paret; Y. Bounouh; J. C. Martin

doi:10.1063/1.366764

Optimum doping level in a-Si:H and a-SiC:H materials

A. Hadjadj, P. St'ahel, P. Roca I Cabarrocas, V. Paret, Y. Bounouh, J. C. Martin

Research output: Contribution to journal › Article › peer-review

Abstract

The changes in the optical and electrical properties of thick a-Si:H and a-SiC:H films doped with diborane are investigated. In situ spectroscopic ellipsometry measurements reveal that, at a ratio of diborane to silane C_g = [B₂H₆]/[SiH₄]<10^-3. the optical properties of both materials are not strongly modified by boron doping. However, in the case of a-Si:H films, an improvement of the morphological and optical properties is observed at C_g = 0.45×10^-3. The existence of an optimum doping level at C_g<10^-3 in the case of an a-Si:H p layer is confirmed by the dependence of the open-circuit voltage of a-Si:H based solar cells on the doping level of the p layer,

Original language	English
Pages (from-to)	830-836
Number of pages	7
Journal	Journal of Applied Physics
Volume	83
Issue number	2
DOIs	https://doi.org/10.1063/1.366764
Publication status	Published - 15 Jan 1998

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title = "Optimum doping level in a-Si:H and a-SiC:H materials",

abstract = "The changes in the optical and electrical properties of thick a-Si:H and a-SiC:H films doped with diborane are investigated. In situ spectroscopic ellipsometry measurements reveal that, at a ratio of diborane to silane Cg = [B2H6]/[SiH4]<10-3. the optical properties of both materials are not strongly modified by boron doping. However, in the case of a-Si:H films, an improvement of the morphological and optical properties is observed at Cg = 0.45×10-3. The existence of an optimum doping level at Cg<10-3 in the case of an a-Si:H p layer is confirmed by the dependence of the open-circuit voltage of a-Si:H based solar cells on the doping level of the p layer,",

author = "A. Hadjadj and P. St'ahel and \{Roca I Cabarrocas\}, P. and V. Paret and Y. Bounouh and Martin, \{J. C.\}",

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T1 - Optimum doping level in a-Si:H and a-SiC:H materials

AU - Hadjadj, A.

AU - St'ahel, P.

AU - Roca I Cabarrocas, P.

AU - Paret, V.

AU - Bounouh, Y.

AU - Martin, J. C.

PY - 1998/1/15

Y1 - 1998/1/15

N2 - The changes in the optical and electrical properties of thick a-Si:H and a-SiC:H films doped with diborane are investigated. In situ spectroscopic ellipsometry measurements reveal that, at a ratio of diborane to silane Cg = [B2H6]/[SiH4]<10-3. the optical properties of both materials are not strongly modified by boron doping. However, in the case of a-Si:H films, an improvement of the morphological and optical properties is observed at Cg = 0.45×10-3. The existence of an optimum doping level at Cg<10-3 in the case of an a-Si:H p layer is confirmed by the dependence of the open-circuit voltage of a-Si:H based solar cells on the doping level of the p layer,

AB - The changes in the optical and electrical properties of thick a-Si:H and a-SiC:H films doped with diborane are investigated. In situ spectroscopic ellipsometry measurements reveal that, at a ratio of diborane to silane Cg = [B2H6]/[SiH4]<10-3. the optical properties of both materials are not strongly modified by boron doping. However, in the case of a-Si:H films, an improvement of the morphological and optical properties is observed at Cg = 0.45×10-3. The existence of an optimum doping level at Cg<10-3 in the case of an a-Si:H p layer is confirmed by the dependence of the open-circuit voltage of a-Si:H based solar cells on the doping level of the p layer,

U2 - 10.1063/1.366764

DO - 10.1063/1.366764

M3 - Article

AN - SCOPUS:0001854019

SN - 0021-8979

VL - 83

SP - 830

EP - 836

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 2

ER -

Optimum doping level in a-Si:H and a-SiC:H materials

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