Optoelectronic properties of a-Si:H films deposited from He-diluted silane

C. Swiatkowski; P. Roca i Cabarrocas; M. Kunst

doi:10.1557/proc-297-73

Optoelectronic properties of a-Si:H films deposited from He-diluted silane

C. Swiatkowski
, P. Roca i Cabarrocas
, M. Kunst

Helmholtz-Zentrum Berlin für Materialien und Energie GmbH

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

In-situ and ex-situ transient photoconductivity measurements of intrinsic a-Si:H films deposited from He-diluted SiH₄ are presented. It is shown that material with good optoelectronic properties can be deposited at high deposition rates. The films can already be characterized during the deposition. It is shown that material with fairly different properties can be deposited with a relative low defect density.

Original language	English
Title of host publication	Amorphous Silicon Technology
Publisher	Publ by Materials Research Society
Pages	73-78
Number of pages	6
ISBN (Print)	155899193X, 9781558991934
DOIs	https://doi.org/10.1557/proc-297-73
Publication status	Published - 1 Jan 1993
Externally published	Yes
Event	Proceedings of the MRS Spring Meeting - San Francisco, CA, USA Duration: 13 Apr 1993 → 16 Apr 1993

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	297
ISSN (Print)	0272-9172

Conference

Conference	Proceedings of the MRS Spring Meeting
City	San Francisco, CA, USA
Period	13/04/93 → 16/04/93

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10.1557/proc-297-73

Cite this

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title = "Optoelectronic properties of a-Si:H films deposited from He-diluted silane",

abstract = "In-situ and ex-situ transient photoconductivity measurements of intrinsic a-Si:H films deposited from He-diluted SiH4 are presented. It is shown that material with good optoelectronic properties can be deposited at high deposition rates. The films can already be characterized during the deposition. It is shown that material with fairly different properties can be deposited with a relative low defect density.",

author = "C. Swiatkowski and \{Roca i Cabarrocas\}, P. and M. Kunst",

year = "1993",

month = jan,

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doi = "10.1557/proc-297-73",

language = "English",

isbn = "155899193X",

series = "Materials Research Society Symposium Proceedings",

publisher = "Publ by Materials Research Society",

pages = "73--78",

booktitle = "Amorphous Silicon Technology",

note = "Proceedings of the MRS Spring Meeting ; Conference date: 13-04-1993 Through 16-04-1993",

}

Swiatkowski, C, Roca i Cabarrocas, P & Kunst, M 1993, Optoelectronic properties of a-Si:H films deposited from He-diluted silane. in Amorphous Silicon Technology. Materials Research Society Symposium Proceedings, vol. 297, Publ by Materials Research Society, pp. 73-78, Proceedings of the MRS Spring Meeting, San Francisco, CA, USA, 13/04/93. https://doi.org/10.1557/proc-297-73

Optoelectronic properties of a-Si:H films deposited from He-diluted silane. / Swiatkowski, C.; Roca i Cabarrocas, P.; Kunst, M.
Amorphous Silicon Technology. Publ by Materials Research Society, 1993. p. 73-78 (Materials Research Society Symposium Proceedings; Vol. 297).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Optoelectronic properties of a-Si:H films deposited from He-diluted silane

AU - Swiatkowski, C.

AU - Roca i Cabarrocas, P.

AU - Kunst, M.

PY - 1993/1/1

Y1 - 1993/1/1

N2 - In-situ and ex-situ transient photoconductivity measurements of intrinsic a-Si:H films deposited from He-diluted SiH4 are presented. It is shown that material with good optoelectronic properties can be deposited at high deposition rates. The films can already be characterized during the deposition. It is shown that material with fairly different properties can be deposited with a relative low defect density.

AB - In-situ and ex-situ transient photoconductivity measurements of intrinsic a-Si:H films deposited from He-diluted SiH4 are presented. It is shown that material with good optoelectronic properties can be deposited at high deposition rates. The films can already be characterized during the deposition. It is shown that material with fairly different properties can be deposited with a relative low defect density.

UR - https://www.scopus.com/pages/publications/0027849207

U2 - 10.1557/proc-297-73

DO - 10.1557/proc-297-73

M3 - Conference contribution

AN - SCOPUS:0027849207

SN - 155899193X

SN - 9781558991934

T3 - Materials Research Society Symposium Proceedings

SP - 73

EP - 78

BT - Amorphous Silicon Technology

PB - Publ by Materials Research Society

T2 - Proceedings of the MRS Spring Meeting

Y2 - 13 April 1993 through 16 April 1993

ER -

Optoelectronic properties of a-Si:H films deposited from He-diluted silane

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