Organized growth of GaAs/AlAs lateral structures on atomic step arrays: what is possible to do?

B. Etienne; F. Laruelle; J. Bloch; L. Sfaxi; F. Lelarge

doi:10.1016/0022-0248(95)80231-Z

Organized growth of GaAs/AlAs lateral structures on atomic step arrays: what is possible to do?

B. Etienne
, F. Laruelle
, J. Bloch
, L. Sfaxi
, F. Lelarge

École Polytechnique

Centre national de la recherche scientifique

Research output: Contribution to journal › Article › peer-review

Abstract

Laterally modulated nanostructures, exhibiting large optical and electrical anisotropy, can be grown on vicinal surfaces. However the lateral organization of Ga and Al atoms is far from ideal. We discuss our way of understanding the growth of these structures.

Original language	English
Pages (from-to)	336-340
Number of pages	5
Journal	Journal of Crystal Growth
Volume	150
DOIs	https://doi.org/10.1016/0022-0248(95)80231-Z
Publication status	Published - 1 Jan 1995

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title = "Organized growth of GaAs/AlAs lateral structures on atomic step arrays: what is possible to do?",

abstract = "Laterally modulated nanostructures, exhibiting large optical and electrical anisotropy, can be grown on vicinal surfaces. However the lateral organization of Ga and Al atoms is far from ideal. We discuss our way of understanding the growth of these structures.",

author = "B. Etienne and F. Laruelle and J. Bloch and L. Sfaxi and F. Lelarge",

year = "1995",

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doi = "10.1016/0022-0248(95)80231-Z",

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T1 - Organized growth of GaAs/AlAs lateral structures on atomic step arrays

T2 - what is possible to do?

AU - Etienne, B.

AU - Laruelle, F.

AU - Bloch, J.

AU - Sfaxi, L.

AU - Lelarge, F.

PY - 1995/1/1

Y1 - 1995/1/1

N2 - Laterally modulated nanostructures, exhibiting large optical and electrical anisotropy, can be grown on vicinal surfaces. However the lateral organization of Ga and Al atoms is far from ideal. We discuss our way of understanding the growth of these structures.

AB - Laterally modulated nanostructures, exhibiting large optical and electrical anisotropy, can be grown on vicinal surfaces. However the lateral organization of Ga and Al atoms is far from ideal. We discuss our way of understanding the growth of these structures.

UR - https://www.scopus.com/pages/publications/0029308905

U2 - 10.1016/0022-0248(95)80231-Z

DO - 10.1016/0022-0248(95)80231-Z

M3 - Article

AN - SCOPUS:0029308905

SN - 0022-0248

VL - 150

SP - 336

EP - 340

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

ER -

Organized growth of GaAs/AlAs lateral structures on atomic step arrays: what is possible to do?

Abstract

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