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OxRAM-based non volatile flip-flop in 28nm FDSOI

  • N. Jovanović
  • , O. Thomas
  • , E. Vianello
  • , J. M. Portal
  • , B. Nikolić
  • , L. Naviner
  • Univ. Joseph Fourier-Grenoble 1
  • University of California
  • Telecom Paris
  • Aix Marseille Université

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

7 Citations (Scopus)

Abstract

This paper presents a robust OxRAM-based nonvolatile flip-flop (NVFF) solution, designed for deep nano-scaled CMOS technologies. Forming, set and reset operations rely on a reliable design approach using thin gate oxide CMOS. The NVFF is benchmarked against a standard FF in 28nm CMOS FDSOI. Non-volatility is added with minimal impact on the FF performances.

Original languageEnglish
Title of host publication2014 IEEE 12th International New Circuits and Systems Conference, NEWCAS 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages141-144
Number of pages4
ISBN (Electronic)9781479948857
DOIs
Publication statusPublished - 22 Oct 2014
Event2014 12th IEEE International New Circuits and Systems Conference, NEWCAS 2014 - Trois-Rivieres, Canada
Duration: 22 Jun 201425 Jun 2014

Publication series

Name2014 IEEE 12th International New Circuits and Systems Conference, NEWCAS 2014

Conference

Conference2014 12th IEEE International New Circuits and Systems Conference, NEWCAS 2014
Country/TerritoryCanada
CityTrois-Rivieres
Period22/06/1425/06/14

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