Abstract
Photoelectron spectroscopy and admittance spectroscopy were used to analyze Cu(In,Ga)Se2 (CIGS) based thin films and heterojunction solar cells based on chemical oxygenation and post-deposition air-annealing effects. The effect of CIGS surface chemistry on the electronic structure of the heterojunction solar cells and the influence on the CIGS layer of oxygenation-induced Cu redistribution were analyzed. Results showed that charge redistribution and compensation of the effective acceptor density can be achieved in the bulk of the absorber.
| Original language | English |
|---|---|
| Pages (from-to) | 497-505 |
| Number of pages | 9 |
| Journal | Journal of Applied Physics |
| Volume | 86 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 1 Jan 1999 |
| Externally published | Yes |