@inproceedings{0e8a1f38235d451e9d1afe4c163c3836,
title = "Paramagnetic defect analysis in UV lamp induced chemical vapour deposited a-SiO2 films",
abstract = "An electron spin resonance study has been carried out on a-SiO2 films deposited from SiH4 and N2O gases using UV lamp induced chemical vapour deposition. Deposition pressures have been varied from 5 torr to 30 torr whilst the substrate temperature was maintained at 240°C. Bridging nitrogen (O3≡Si-N-Si≡O3) and oxygen-vacancy center defects are observed in small quantities (≈ 1016cm-3) whilst over coordinated N defects are observed in concentrations up to 1018cm-3 dependent upon the deposition pressure. The concentration of these defects can be dramatically reduced either by depositing the a-SiO2 at high pressures (≈ 30 torr) or by post-deposition annealing at ≈ 600°C. Comparison with data on films produced by plasma enhanced chemical vapour deposition demonstrates that the mode of incorporation of nitrogen into the network depends critically upon the chemical species in the deposition reactor.",
author = "C. Debauche and C. Licoppe and J. Flicstein and Devine, \{R. A.B.\}",
year = "1993",
month = dec,
day = "1",
language = "English",
isbn = "1558991794",
series = "Materials Research Society Symposium Proceedings",
publisher = "Publ by Materials Research Society",
pages = "307--312",
editor = "Jerzy Kanicki and Warren, \{William L.\} and Devine, \{Roderick A.B.\} and Masakiyo Matsumura",
booktitle = "Materials Research Society Symposium Proceedings",
note = "Proceedings of a Symposium on Amorphous Insulating Thin Films ; Conference date: 01-12-1992 Through 04-12-1992",
}