Passive mode locking of a GaSb-based quantum well diode laser emitting at 2.1μm

K. Merghem; R. Teissier; G. Aubin; A. M. Monakhov; A. Ramdane; A. N. Baranov

doi:10.1063/1.4931364

Passive mode locking of a GaSb-based quantum well diode laser emitting at 2.1μm

K. Merghem
, R. Teissier
, G. Aubin
, A. M. Monakhov
, A. Ramdane
, A. N. Baranov

Research output: Contribution to journal › Article › peer-review

Abstract

We demonstrate passive mode locking of a GaSb-based diode laser emitting at 2.1?μm. The active region of the studied device consists in two 10-nm-thick GaInSbAs/GaAlSbAs quantum wells. Passive mode locking has been achieved in a two-section laser with one of the sections used as a saturable absorber. A microwave signal at 20.6GHz, measured in the electrical circuit of the absorber, corresponds to the fundamental photon round-trip frequency in the laser resonator. The linewidth of this signal as low as ∼10kHz has been observed at certain operating conditions, indicating low phase noise mode-locked operation.

Original language	English
Article number	111109
Journal	Applied Physics Letters
Volume	107
Issue number	11
DOIs	https://doi.org/10.1063/1.4931364
Publication status	Published - 14 Sept 2015

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@article{3a7f306847e946a8911f26599fb3eef8,

title = "Passive mode locking of a GaSb-based quantum well diode laser emitting at 2.1μm",

abstract = "We demonstrate passive mode locking of a GaSb-based diode laser emitting at 2.1?μm. The active region of the studied device consists in two 10-nm-thick GaInSbAs/GaAlSbAs quantum wells. Passive mode locking has been achieved in a two-section laser with one of the sections used as a saturable absorber. A microwave signal at 20.6GHz, measured in the electrical circuit of the absorber, corresponds to the fundamental photon round-trip frequency in the laser resonator. The linewidth of this signal as low as ∼10kHz has been observed at certain operating conditions, indicating low phase noise mode-locked operation.",

author = "K. Merghem and R. Teissier and G. Aubin and Monakhov, \{A. M.\} and A. Ramdane and Baranov, \{A. N.\}",

note = "Publisher Copyright: {\textcopyright} 2015 AIP Publishing LLC.",

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doi = "10.1063/1.4931364",

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T1 - Passive mode locking of a GaSb-based quantum well diode laser emitting at 2.1μm

AU - Merghem, K.

AU - Teissier, R.

AU - Aubin, G.

AU - Monakhov, A. M.

AU - Ramdane, A.

AU - Baranov, A. N.

PY - 2015/9/14

Y1 - 2015/9/14

N2 - We demonstrate passive mode locking of a GaSb-based diode laser emitting at 2.1?μm. The active region of the studied device consists in two 10-nm-thick GaInSbAs/GaAlSbAs quantum wells. Passive mode locking has been achieved in a two-section laser with one of the sections used as a saturable absorber. A microwave signal at 20.6GHz, measured in the electrical circuit of the absorber, corresponds to the fundamental photon round-trip frequency in the laser resonator. The linewidth of this signal as low as ∼10kHz has been observed at certain operating conditions, indicating low phase noise mode-locked operation.

AB - We demonstrate passive mode locking of a GaSb-based diode laser emitting at 2.1?μm. The active region of the studied device consists in two 10-nm-thick GaInSbAs/GaAlSbAs quantum wells. Passive mode locking has been achieved in a two-section laser with one of the sections used as a saturable absorber. A microwave signal at 20.6GHz, measured in the electrical circuit of the absorber, corresponds to the fundamental photon round-trip frequency in the laser resonator. The linewidth of this signal as low as ∼10kHz has been observed at certain operating conditions, indicating low phase noise mode-locked operation.

U2 - 10.1063/1.4931364

DO - 10.1063/1.4931364

M3 - Article

AN - SCOPUS:84942050510

SN - 0003-6951

VL - 107

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 11

M1 - 111109

ER -

Passive mode locking of a GaSb-based quantum well diode laser emitting at 2.1μm

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